JPS55141760A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS55141760A JPS55141760A JP4956179A JP4956179A JPS55141760A JP S55141760 A JPS55141760 A JP S55141760A JP 4956179 A JP4956179 A JP 4956179A JP 4956179 A JP4956179 A JP 4956179A JP S55141760 A JPS55141760 A JP S55141760A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- field effect
- effect transistor
- layer
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To provide a field effect transistor (FET) having desired crystal and impurity density by forming a gate columnar semiconductor region having a depth reaching a substrate in an n-type semiconductor layer on the substrate. CONSTITUTION:An n-type semiconductor layer 12 is formed on a semi-insulating substrate 1, and source and drain electrodes 13 and 14 are formed in an ohmic junction on the layer 12. Then, p-type columnar gate semicnductor regions 15a-15d are vertically extended to the surface of the layer 12 having a depth reaching the substrate 1. Thereafter, a gate electrode 16 is formed in an ohmic junction with the regions 15a-15d.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4956179A JPS55141760A (en) | 1979-04-21 | 1979-04-21 | Field effect transistor |
CA350,036A CA1133149A (en) | 1979-04-21 | 1980-04-16 | Field effect transistor devices |
FR8008805A FR2454703B1 (en) | 1979-04-21 | 1980-04-18 | FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD |
NL8002257A NL188776C (en) | 1979-04-21 | 1980-04-18 | FIELD EFFECT TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THESE. |
DE19803015158 DE3015158A1 (en) | 1979-04-21 | 1980-04-19 | FIELD EFFECT TRANSISTOR DEVICES AND METHOD FOR THEIR PRODUCTION |
GB8013051A GB2051476B (en) | 1979-04-21 | 1980-04-21 | Field effect transistor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4956179A JPS55141760A (en) | 1979-04-21 | 1979-04-21 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55141760A true JPS55141760A (en) | 1980-11-05 |
Family
ID=12834607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4956179A Pending JPS55141760A (en) | 1979-04-21 | 1979-04-21 | Field effect transistor |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS55141760A (en) |
CA (1) | CA1133149A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463366A (en) * | 1980-06-20 | 1984-07-31 | Nippon Telegraph & Telephone Public Corp. | Field effect transistor with combination Schottky-junction gate |
US4482907A (en) * | 1981-03-10 | 1984-11-13 | Thomson-Csf | Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS516680A (en) * | 1974-07-05 | 1976-01-20 | Mitsubishi Electric Corp | SETSUGOGATADENKAIKOKATORANJISUTA OYOBI SONOSEIZOHO |
JPS516683A (en) * | 1974-07-05 | 1976-01-20 | Hitachi Ltd | DENKAIKOKATORANJISUTATO BAIHOORATORANJISUTATOOJUSURU MONORISHITSUKUSHUSEKIKAIROSOCHI OYOBI SONOSEIHO |
JPS5119975A (en) * | 1974-08-12 | 1976-02-17 | Fujitsu Ltd | Kibanjoheno pataanno sentakukeiseiho |
JPS51110281A (en) * | 1975-03-24 | 1976-09-29 | Mitsubishi Electric Corp | DENKAI KOKATORAN JISUTA |
JPS5232682A (en) * | 1975-09-08 | 1977-03-12 | Mitsubishi Electric Corp | Manufacturing process of semiconductor device |
-
1979
- 1979-04-21 JP JP4956179A patent/JPS55141760A/en active Pending
-
1980
- 1980-04-16 CA CA350,036A patent/CA1133149A/en not_active Expired
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS516680A (en) * | 1974-07-05 | 1976-01-20 | Mitsubishi Electric Corp | SETSUGOGATADENKAIKOKATORANJISUTA OYOBI SONOSEIZOHO |
JPS516683A (en) * | 1974-07-05 | 1976-01-20 | Hitachi Ltd | DENKAIKOKATORANJISUTATO BAIHOORATORANJISUTATOOJUSURU MONORISHITSUKUSHUSEKIKAIROSOCHI OYOBI SONOSEIHO |
JPS5119975A (en) * | 1974-08-12 | 1976-02-17 | Fujitsu Ltd | Kibanjoheno pataanno sentakukeiseiho |
JPS51110281A (en) * | 1975-03-24 | 1976-09-29 | Mitsubishi Electric Corp | DENKAI KOKATORAN JISUTA |
JPS5232682A (en) * | 1975-09-08 | 1977-03-12 | Mitsubishi Electric Corp | Manufacturing process of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463366A (en) * | 1980-06-20 | 1984-07-31 | Nippon Telegraph & Telephone Public Corp. | Field effect transistor with combination Schottky-junction gate |
US4482907A (en) * | 1981-03-10 | 1984-11-13 | Thomson-Csf | Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor |
Also Published As
Publication number | Publication date |
---|---|
CA1133149A (en) | 1982-10-05 |
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