JPS55141760A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS55141760A
JPS55141760A JP4956179A JP4956179A JPS55141760A JP S55141760 A JPS55141760 A JP S55141760A JP 4956179 A JP4956179 A JP 4956179A JP 4956179 A JP4956179 A JP 4956179A JP S55141760 A JPS55141760 A JP S55141760A
Authority
JP
Japan
Prior art keywords
substrate
field effect
effect transistor
layer
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4956179A
Other languages
Japanese (ja)
Inventor
Yasunobu Ishii
Kazuyoshi Asai
Masao Uchida
Katsuhiko Kurumada
Keisuke Shimada
Masao Ida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4956179A priority Critical patent/JPS55141760A/en
Priority to CA350,036A priority patent/CA1133149A/en
Priority to FR8008805A priority patent/FR2454703B1/en
Priority to NL8002257A priority patent/NL188776C/en
Priority to DE19803015158 priority patent/DE3015158A1/en
Priority to GB8013051A priority patent/GB2051476B/en
Publication of JPS55141760A publication Critical patent/JPS55141760A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To provide a field effect transistor (FET) having desired crystal and impurity density by forming a gate columnar semiconductor region having a depth reaching a substrate in an n-type semiconductor layer on the substrate. CONSTITUTION:An n-type semiconductor layer 12 is formed on a semi-insulating substrate 1, and source and drain electrodes 13 and 14 are formed in an ohmic junction on the layer 12. Then, p-type columnar gate semicnductor regions 15a-15d are vertically extended to the surface of the layer 12 having a depth reaching the substrate 1. Thereafter, a gate electrode 16 is formed in an ohmic junction with the regions 15a-15d.
JP4956179A 1979-04-21 1979-04-21 Field effect transistor Pending JPS55141760A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP4956179A JPS55141760A (en) 1979-04-21 1979-04-21 Field effect transistor
CA350,036A CA1133149A (en) 1979-04-21 1980-04-16 Field effect transistor devices
FR8008805A FR2454703B1 (en) 1979-04-21 1980-04-18 FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD
NL8002257A NL188776C (en) 1979-04-21 1980-04-18 FIELD EFFECT TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THESE.
DE19803015158 DE3015158A1 (en) 1979-04-21 1980-04-19 FIELD EFFECT TRANSISTOR DEVICES AND METHOD FOR THEIR PRODUCTION
GB8013051A GB2051476B (en) 1979-04-21 1980-04-21 Field effect transistor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4956179A JPS55141760A (en) 1979-04-21 1979-04-21 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS55141760A true JPS55141760A (en) 1980-11-05

Family

ID=12834607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4956179A Pending JPS55141760A (en) 1979-04-21 1979-04-21 Field effect transistor

Country Status (2)

Country Link
JP (1) JPS55141760A (en)
CA (1) CA1133149A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463366A (en) * 1980-06-20 1984-07-31 Nippon Telegraph & Telephone Public Corp. Field effect transistor with combination Schottky-junction gate
US4482907A (en) * 1981-03-10 1984-11-13 Thomson-Csf Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516680A (en) * 1974-07-05 1976-01-20 Mitsubishi Electric Corp SETSUGOGATADENKAIKOKATORANJISUTA OYOBI SONOSEIZOHO
JPS516683A (en) * 1974-07-05 1976-01-20 Hitachi Ltd DENKAIKOKATORANJISUTATO BAIHOORATORANJISUTATOOJUSURU MONORISHITSUKUSHUSEKIKAIROSOCHI OYOBI SONOSEIHO
JPS5119975A (en) * 1974-08-12 1976-02-17 Fujitsu Ltd Kibanjoheno pataanno sentakukeiseiho
JPS51110281A (en) * 1975-03-24 1976-09-29 Mitsubishi Electric Corp DENKAI KOKATORAN JISUTA
JPS5232682A (en) * 1975-09-08 1977-03-12 Mitsubishi Electric Corp Manufacturing process of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516680A (en) * 1974-07-05 1976-01-20 Mitsubishi Electric Corp SETSUGOGATADENKAIKOKATORANJISUTA OYOBI SONOSEIZOHO
JPS516683A (en) * 1974-07-05 1976-01-20 Hitachi Ltd DENKAIKOKATORANJISUTATO BAIHOORATORANJISUTATOOJUSURU MONORISHITSUKUSHUSEKIKAIROSOCHI OYOBI SONOSEIHO
JPS5119975A (en) * 1974-08-12 1976-02-17 Fujitsu Ltd Kibanjoheno pataanno sentakukeiseiho
JPS51110281A (en) * 1975-03-24 1976-09-29 Mitsubishi Electric Corp DENKAI KOKATORAN JISUTA
JPS5232682A (en) * 1975-09-08 1977-03-12 Mitsubishi Electric Corp Manufacturing process of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463366A (en) * 1980-06-20 1984-07-31 Nippon Telegraph & Telephone Public Corp. Field effect transistor with combination Schottky-junction gate
US4482907A (en) * 1981-03-10 1984-11-13 Thomson-Csf Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor

Also Published As

Publication number Publication date
CA1133149A (en) 1982-10-05

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