JPS54124688A - Insulating gate field effect transistor - Google Patents

Insulating gate field effect transistor

Info

Publication number
JPS54124688A
JPS54124688A JP3270178A JP3270178A JPS54124688A JP S54124688 A JPS54124688 A JP S54124688A JP 3270178 A JP3270178 A JP 3270178A JP 3270178 A JP3270178 A JP 3270178A JP S54124688 A JPS54124688 A JP S54124688A
Authority
JP
Japan
Prior art keywords
region
density
conductive type
atoms
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3270178A
Other languages
Japanese (ja)
Inventor
Akira Nakagawara
Nobuhiro Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3270178A priority Critical patent/JPS54124688A/en
Publication of JPS54124688A publication Critical patent/JPS54124688A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To raise the avalanche destruction voltage of the PN junction, which is formed by a drain region and a substrate, and enlarge the punch through voltage between the drain and the source by constituting the drain region by a high-impurity density region and a low-impurity density region sorrouding the region above. CONSTITUTION:On one conductive type semiconductor substrate 11 of the maximum impurity density of 10<4> to 10<6> atoms/cm<3>, opposite conductive type low- density drain region 19 of the maximum impurity density of 10<15> to 10<17> atoms/cm<3> and opposite conductive type high-density source region 13 of the maximum impurity of 10<18> to 10<21> atoms/cm<3> are formed by diffusion. Next, internal drain region 14 which has the same conductive type as substrate 11 and the maximum impurity density of 10<18> to 10<21> atoms/cm<3> and channel stopper 12 which has the same conductive type and density as region 14 are formed in region 19 by diffusion. After that, all the surface is covered with SiO2 film 15, and a window is provided. Then, source and drain electrodes 16 and 18 are fitted, and gate electrode 17 is caused to adhere onto film 15 between regions 13 and 14.
JP3270178A 1978-03-20 1978-03-20 Insulating gate field effect transistor Pending JPS54124688A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3270178A JPS54124688A (en) 1978-03-20 1978-03-20 Insulating gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3270178A JPS54124688A (en) 1978-03-20 1978-03-20 Insulating gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS54124688A true JPS54124688A (en) 1979-09-27

Family

ID=12366144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3270178A Pending JPS54124688A (en) 1978-03-20 1978-03-20 Insulating gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS54124688A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665418A (en) * 1983-01-10 1987-05-12 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105490A (en) * 1973-02-07 1974-10-05
JPS50106588A (en) * 1974-01-29 1975-08-22

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105490A (en) * 1973-02-07 1974-10-05
JPS50106588A (en) * 1974-01-29 1975-08-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665418A (en) * 1983-01-10 1987-05-12 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device

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