JPS572579A - Manufacture of junction type field effect transistor - Google Patents

Manufacture of junction type field effect transistor

Info

Publication number
JPS572579A
JPS572579A JP7627980A JP7627980A JPS572579A JP S572579 A JPS572579 A JP S572579A JP 7627980 A JP7627980 A JP 7627980A JP 7627980 A JP7627980 A JP 7627980A JP S572579 A JPS572579 A JP S572579A
Authority
JP
Japan
Prior art keywords
region
ion injection
source
manufacture
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7627980A
Other languages
Japanese (ja)
Inventor
Tadahiko Tanaka
Takeshi Omukae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP7627980A priority Critical patent/JPS572579A/en
Publication of JPS572579A publication Critical patent/JPS572579A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To readily control the impurty density and the diffusion depth of ion injection region and insular region respectively by forming the ion injection region and the insular region by ion injection. CONSTITUTION:An oxidized film 23 is formed on a P type silicon semiconductor substrate 21, and an ion injection region 22 is formed by ion injection. Then, N type impurity ions are injected on the surface of the substrate 21 to form an insular region 24. Subsequently, a P<+> type gate region 25 is formed on the surface of the region 24, the region 24 is divided into source and drain regions 26 and 27, source and drain contacting regions 31 and 32 are further formed, and source and drain electrodes 29 and 30 are then formed.
JP7627980A 1980-06-05 1980-06-05 Manufacture of junction type field effect transistor Pending JPS572579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7627980A JPS572579A (en) 1980-06-05 1980-06-05 Manufacture of junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7627980A JPS572579A (en) 1980-06-05 1980-06-05 Manufacture of junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS572579A true JPS572579A (en) 1982-01-07

Family

ID=13600832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7627980A Pending JPS572579A (en) 1980-06-05 1980-06-05 Manufacture of junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS572579A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987132A (en) * 1982-11-12 1984-05-19 Mitsubishi Chem Ind Ltd Blow molded container
US5033093A (en) * 1990-01-17 1991-07-16 Peavey Electronics Corporation Compact microphone and method of manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987132A (en) * 1982-11-12 1984-05-19 Mitsubishi Chem Ind Ltd Blow molded container
JPH0246459B2 (en) * 1982-11-12 1990-10-16 Mitsubishi Chem Ind
US5033093A (en) * 1990-01-17 1991-07-16 Peavey Electronics Corporation Compact microphone and method of manufacture

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