JPS56115570A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56115570A
JPS56115570A JP1949080A JP1949080A JPS56115570A JP S56115570 A JPS56115570 A JP S56115570A JP 1949080 A JP1949080 A JP 1949080A JP 1949080 A JP1949080 A JP 1949080A JP S56115570 A JPS56115570 A JP S56115570A
Authority
JP
Japan
Prior art keywords
hole
region
recess
oxide film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1949080A
Other languages
Japanese (ja)
Inventor
Takashi Hirao
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1949080A priority Critical patent/JPS56115570A/en
Publication of JPS56115570A publication Critical patent/JPS56115570A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To readily manufacture a short channel MOS transistor with preferable controllability by forming a selective hole at a thick thermal oxide film on a substrate and installing a mask having a recess in the hole to form a channel region. CONSTITUTION:An oxide film 12 is formed by a thermal oxidation process on a P type silicon semiconductor substrate 11. After the film 12 is selectively opened, a gate oxide film 13 is formed at the hole. A polycrystalline silicon 14 is then formed on the entire surface, and a mask having a recess 15 is formed in the hole. Thereafter, B<+> ions are injected to form a B<+> ion injected region only under the bottom of the recess 15, and an enhancement type channel region 16 is formed. The silicon 14 and the film 12 are selectively removed at both sides of the region 16, N type impurity is introduced, high density N<+> type source and drain regions 17, 18 are formed, and a gate region 19 is formed.
JP1949080A 1980-02-18 1980-02-18 Manufacture of semiconductor device Pending JPS56115570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1949080A JPS56115570A (en) 1980-02-18 1980-02-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1949080A JPS56115570A (en) 1980-02-18 1980-02-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56115570A true JPS56115570A (en) 1981-09-10

Family

ID=12000793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1949080A Pending JPS56115570A (en) 1980-02-18 1980-02-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56115570A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107560A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Semiconductor integrated circuit device
US5021845A (en) * 1985-08-30 1991-06-04 Texas Instruments Incorporated Semiconductor device and process fabrication thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107560A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Semiconductor integrated circuit device
JPH058584B2 (en) * 1982-12-13 1993-02-02 Hitachi Ltd
US5021845A (en) * 1985-08-30 1991-06-04 Texas Instruments Incorporated Semiconductor device and process fabrication thereof

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