JPH058584B2 - - Google Patents

Info

Publication number
JPH058584B2
JPH058584B2 JP57216821A JP21682182A JPH058584B2 JP H058584 B2 JPH058584 B2 JP H058584B2 JP 57216821 A JP57216821 A JP 57216821A JP 21682182 A JP21682182 A JP 21682182A JP H058584 B2 JPH058584 B2 JP H058584B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57216821A
Other versions
JPS59107560A (en
Inventor
Osamu Minato
Toshiaki Masuhara
Toshio Sasaki
Akira Yamamoto
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57216821A priority Critical patent/JPH058584B2/ja
Publication of JPS59107560A publication Critical patent/JPS59107560A/en
Publication of JPH058584B2 publication Critical patent/JPH058584B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
JP57216821A 1982-12-13 1982-12-13 Expired - Lifetime JPH058584B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57216821A JPH058584B2 (en) 1982-12-13 1982-12-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57216821A JPH058584B2 (en) 1982-12-13 1982-12-13

Publications (2)

Publication Number Publication Date
JPS59107560A JPS59107560A (en) 1984-06-21
JPH058584B2 true JPH058584B2 (en) 1993-02-02

Family

ID=16694414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57216821A Expired - Lifetime JPH058584B2 (en) 1982-12-13 1982-12-13

Country Status (1)

Country Link
JP (1) JPH058584B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2869791B2 (en) * 1988-08-31 1999-03-10 株式会社日立製作所 Semiconductor integrated circuit device and electronic device using the same
JPH02196469A (en) * 1989-01-25 1990-08-03 Fujitsu Ltd Semiconductor device
DE69532553D1 (en) 1994-11-30 2004-03-18 Sharp Kk processor
JP3068513B2 (en) * 1997-07-04 2000-07-24 日本電気アイシーマイコンシステム株式会社 Semiconductor device and manufacturing method thereof

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423340A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Mis semiconductor integrated circuit
JPS5539412A (en) * 1978-09-13 1980-03-19 Hitachi Ltd Insulating gate field effect transistor integrated circuit and its manufacture
JPS5673468A (en) * 1979-11-21 1981-06-18 Toshiba Corp Mos type semiconductor device
JPS5693360A (en) * 1979-12-26 1981-07-28 Mitsubishi Electric Corp Semiconductor device
JPS56115570A (en) * 1980-02-18 1981-09-10 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56146275A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS56146276A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS5710822A (en) * 1980-06-23 1982-01-20 Toshiba Corp Integrated circuit device
JPS5741721A (en) * 1980-08-26 1982-03-09 Seiko Instr & Electronics Ltd Constant voltage power circuit
JPS57126161A (en) * 1981-01-28 1982-08-05 Nec Corp Integrated circuit device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423340A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Mis semiconductor integrated circuit
JPS5539412A (en) * 1978-09-13 1980-03-19 Hitachi Ltd Insulating gate field effect transistor integrated circuit and its manufacture
JPS5673468A (en) * 1979-11-21 1981-06-18 Toshiba Corp Mos type semiconductor device
JPS5693360A (en) * 1979-12-26 1981-07-28 Mitsubishi Electric Corp Semiconductor device
JPS56115570A (en) * 1980-02-18 1981-09-10 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56146275A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS56146276A (en) * 1980-02-29 1981-11-13 Chiyou Lsi Gijutsu Kenkyu Kumiai Insulating gate type field-effect transistor
JPS5710822A (en) * 1980-06-23 1982-01-20 Toshiba Corp Integrated circuit device
JPS5741721A (en) * 1980-08-26 1982-03-09 Seiko Instr & Electronics Ltd Constant voltage power circuit
JPS57126161A (en) * 1981-01-28 1982-08-05 Nec Corp Integrated circuit device

Also Published As

Publication number Publication date
JPS59107560A (en) 1984-06-21

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