JPS5693360A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5693360A
JPS5693360A JP17369579A JP17369579A JPS5693360A JP S5693360 A JPS5693360 A JP S5693360A JP 17369579 A JP17369579 A JP 17369579A JP 17369579 A JP17369579 A JP 17369579A JP S5693360 A JPS5693360 A JP S5693360A
Authority
JP
Japan
Prior art keywords
transistor
region
refined
power supply
external power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17369579A
Other languages
Japanese (ja)
Inventor
Hideyuki Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17369579A priority Critical patent/JPS5693360A/en
Publication of JPS5693360A publication Critical patent/JPS5693360A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enable an integration to be made higher and refined decreasing voltages supplied to circuit elements by a method wherein a voltage dropping element is provided between the circuit elements in a refined pattern region constituting IC and an external power supply voltage source. CONSTITUTION:The refined pattern region 4 for forming elements airmed to be finely granulated such as MOS transistor 2 is sectionally provided in an internal circuit region 1 constituting IC, and the MOS transistor 5 acting as the voltage dropping element is formed situated outside the region 4 and at the same time within the region 1. Thereafter, the external power supply voltage source 3 is connected to a transistor 2 through the transistor 5. Thus, the voltage applied to the transistor 2 is decreased to a low value, the withstand voltages at a source, drain and gate of the transistor 2 are allowed to have enough reserves and the semiconductor device is refined.
JP17369579A 1979-12-26 1979-12-26 Semiconductor device Pending JPS5693360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17369579A JPS5693360A (en) 1979-12-26 1979-12-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17369579A JPS5693360A (en) 1979-12-26 1979-12-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5693360A true JPS5693360A (en) 1981-07-28

Family

ID=15965390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17369579A Pending JPS5693360A (en) 1979-12-26 1979-12-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5693360A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106413A2 (en) * 1982-10-18 1984-04-25 Koninklijke Philips Electronics N.V. Semiconductor structure having a voltage level shifter
JPS59107560A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Semiconductor integrated circuit device
JPS59163849A (en) * 1983-03-08 1984-09-14 Toshiba Corp Semiconductor integrated circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106413A2 (en) * 1982-10-18 1984-04-25 Koninklijke Philips Electronics N.V. Semiconductor structure having a voltage level shifter
JPS59107560A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Semiconductor integrated circuit device
JPH058584B2 (en) * 1982-12-13 1993-02-02 Hitachi Ltd
JPS59163849A (en) * 1983-03-08 1984-09-14 Toshiba Corp Semiconductor integrated circuit
JPH0524670B2 (en) * 1983-03-08 1993-04-08 Tokyo Shibaura Electric Co

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