JPS5479527A - Voltage sense circuit - Google Patents

Voltage sense circuit

Info

Publication number
JPS5479527A
JPS5479527A JP14677577A JP14677577A JPS5479527A JP S5479527 A JPS5479527 A JP S5479527A JP 14677577 A JP14677577 A JP 14677577A JP 14677577 A JP14677577 A JP 14677577A JP S5479527 A JPS5479527 A JP S5479527A
Authority
JP
Japan
Prior art keywords
inverter
output
cell array
gate
detects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14677577A
Other languages
Japanese (ja)
Other versions
JPS5914832B2 (en
Inventor
Yoshio Aisaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP52146775A priority Critical patent/JPS5914832B2/en
Publication of JPS5479527A publication Critical patent/JPS5479527A/en
Publication of JPS5914832B2 publication Critical patent/JPS5914832B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To shorten the access time of the voltage sensor circuit of a semiconductor memory unit by varying the threshold voltage of an inverter, which detects the output voltage level variation of a memory cell array, at adequate timing. CONSTITUTION:The voltage sensor circuit of the semiconductor memory unit is provided with the 1st inverter 14 composed of depletion load MOS transistor 12 and driving MOSTr 131 inputting the output of memory cell array 19 to the gate, and the 2nd inverter 15 inverting the output of this inverter 14. In addition, the feedback circuit is provided which connects the output terminal of inverter 15 to the gate of load Tr12 of inverter 14 via depletion MOS TR3 21 and 22. Then, the threshold voltage of inverter 14 which detects the output voltage level of cell array 19 is varied at the timing of the feedback circuit.
JP52146775A 1977-12-07 1977-12-07 voltage sense circuit Expired JPS5914832B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52146775A JPS5914832B2 (en) 1977-12-07 1977-12-07 voltage sense circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52146775A JPS5914832B2 (en) 1977-12-07 1977-12-07 voltage sense circuit

Publications (2)

Publication Number Publication Date
JPS5479527A true JPS5479527A (en) 1979-06-25
JPS5914832B2 JPS5914832B2 (en) 1984-04-06

Family

ID=15415251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52146775A Expired JPS5914832B2 (en) 1977-12-07 1977-12-07 voltage sense circuit

Country Status (1)

Country Link
JP (1) JPS5914832B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053428A2 (en) * 1980-09-25 1982-06-09 Kabushiki Kaisha Toshiba A memory device including a sense amplifier
JPS59231795A (en) * 1983-06-13 1984-12-26 Mitsubishi Electric Corp Memory device
JPS63222393A (en) * 1987-03-12 1988-09-16 Rohm Co Ltd Data output circuit
JPH02244768A (en) * 1989-03-17 1990-09-28 Toshiba Corp Non-volatile semiconductor memory
EP0496523A2 (en) * 1991-01-22 1992-07-29 Nec Corporation Sense amplifier circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053428A2 (en) * 1980-09-25 1982-06-09 Kabushiki Kaisha Toshiba A memory device including a sense amplifier
EP0227128A2 (en) * 1980-09-25 1987-07-01 Kabushiki Kaisha Toshiba Memory device including a sense amplifier
JPS59231795A (en) * 1983-06-13 1984-12-26 Mitsubishi Electric Corp Memory device
JPH0120519B2 (en) * 1983-06-13 1989-04-17 Mitsubishi Electric Corp
JPS63222393A (en) * 1987-03-12 1988-09-16 Rohm Co Ltd Data output circuit
JPH02244768A (en) * 1989-03-17 1990-09-28 Toshiba Corp Non-volatile semiconductor memory
EP0496523A2 (en) * 1991-01-22 1992-07-29 Nec Corporation Sense amplifier circuit
EP0496523A3 (en) * 1991-01-22 1994-04-20 Nec Corp

Also Published As

Publication number Publication date
JPS5914832B2 (en) 1984-04-06

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