JPS5641595A - Semiconductor static memory unit - Google Patents

Semiconductor static memory unit

Info

Publication number
JPS5641595A
JPS5641595A JP11495279A JP11495279A JPS5641595A JP S5641595 A JPS5641595 A JP S5641595A JP 11495279 A JP11495279 A JP 11495279A JP 11495279 A JP11495279 A JP 11495279A JP S5641595 A JPS5641595 A JP S5641595A
Authority
JP
Japan
Prior art keywords
node
voltage
memory unit
fets
extent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11495279A
Other languages
Japanese (ja)
Other versions
JPS6028079B2 (en
Inventor
Sumio Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP54114952A priority Critical patent/JPS6028079B2/en
Publication of JPS5641595A publication Critical patent/JPS5641595A/en
Publication of JPS6028079B2 publication Critical patent/JPS6028079B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To give the large margin of design by making a check on the extent of a write with accuracy by keeping a sense node constant regardless of an electric power voltage. CONSTITUTION:This memory unit is equipped with memory cell array 11 of (m) rows by (n) columns, FET14 for charging common sense node 13, and transfer gate FET15 making a connection between node 13 and the sense amplifier and the gates of FETs 14 and 15 are controlled by the output of constant-voltage generating circuit 16. Then, threshold levels of FETs 14 and 15 are about OV and an output voltage having no relation to electric power source Vcc of circuit 16 is applied, as it is, to node 13. Therefore, the voltage of node 13 is kept constant and an accurate check on the extent of a write becomes possible.
JP54114952A 1979-09-07 1979-09-07 Semiconductor static memory device Expired JPS6028079B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54114952A JPS6028079B2 (en) 1979-09-07 1979-09-07 Semiconductor static memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54114952A JPS6028079B2 (en) 1979-09-07 1979-09-07 Semiconductor static memory device

Publications (2)

Publication Number Publication Date
JPS5641595A true JPS5641595A (en) 1981-04-18
JPS6028079B2 JPS6028079B2 (en) 1985-07-02

Family

ID=14650704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54114952A Expired JPS6028079B2 (en) 1979-09-07 1979-09-07 Semiconductor static memory device

Country Status (1)

Country Link
JP (1) JPS6028079B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133750A (en) * 1983-12-21 1985-07-16 Matsushita Electronics Corp Memory device
JPS6231094A (en) * 1985-08-01 1987-02-10 Toshiba Corp Non-volatile semiconductor memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133750A (en) * 1983-12-21 1985-07-16 Matsushita Electronics Corp Memory device
JPS6231094A (en) * 1985-08-01 1987-02-10 Toshiba Corp Non-volatile semiconductor memory device
JPH0323997B2 (en) * 1985-08-01 1991-04-02 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS6028079B2 (en) 1985-07-02

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