FR2300391A1 - Selective access transistor memory - is fitted with each memory cell having storage circuit memory transistor and data conservation circuit - Google Patents

Selective access transistor memory - is fitted with each memory cell having storage circuit memory transistor and data conservation circuit

Info

Publication number
FR2300391A1
FR2300391A1 FR7603371A FR7603371A FR2300391A1 FR 2300391 A1 FR2300391 A1 FR 2300391A1 FR 7603371 A FR7603371 A FR 7603371A FR 7603371 A FR7603371 A FR 7603371A FR 2300391 A1 FR2300391 A1 FR 2300391A1
Authority
FR
France
Prior art keywords
memory
circuit
transistor
selective access
fitted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7603371A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Priority to FR7603371A priority Critical patent/FR2300391A1/en
Publication of FR2300391A1 publication Critical patent/FR2300391A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Static Random-Access Memory (AREA)

Abstract

The selective access memory has a group of memory cells arranged in rows and columns, each cell having a storage circuit connected to the associated row and column lines and a memory transistor, coupled to the storage circuit. The memory also has a data conservation circuit, for detecting an interruption in the current and for storing in the transistors the states of the storage circuits. A re-setting circuit is used for returning the storage circuits to their initial stage, as indicated by the transistor, upon the return of the current supply. Pref. each of the memory transistors is an avalanche MOSFET with a floating gate electrode and each being coupled to a static memory circuit.
FR7603371A 1976-02-06 1976-02-06 Selective access transistor memory - is fitted with each memory cell having storage circuit memory transistor and data conservation circuit Withdrawn FR2300391A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7603371A FR2300391A1 (en) 1976-02-06 1976-02-06 Selective access transistor memory - is fitted with each memory cell having storage circuit memory transistor and data conservation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7603371A FR2300391A1 (en) 1976-02-06 1976-02-06 Selective access transistor memory - is fitted with each memory cell having storage circuit memory transistor and data conservation circuit

Publications (1)

Publication Number Publication Date
FR2300391A1 true FR2300391A1 (en) 1976-09-03

Family

ID=9168858

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7603371A Withdrawn FR2300391A1 (en) 1976-02-06 1976-02-06 Selective access transistor memory - is fitted with each memory cell having storage circuit memory transistor and data conservation circuit

Country Status (1)

Country Link
FR (1) FR2300391A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0025054A1 (en) * 1979-03-13 1981-03-18 Ncr Corporation Static volatile/non-volatile ram system
EP0311146A1 (en) * 1981-11-23 1989-04-12 Fairchild Semiconductor Corporation Self-refreshing memory cell
EP0387101A2 (en) * 1989-03-10 1990-09-12 Seiko Instruments Inc. Semi-conductor non-volatile memory and method of writing the same
EP0412781A1 (en) * 1989-08-09 1991-02-13 Kawasaki Steel Corporation Test method for an integrated circuit including non-volatile memory cell capable of temporarily holding information

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5825064A (en) * 1919-03-10 1998-10-20 Agency Of Industrial Science And Technology And Seiko Instruments Inc. Semiconductor volatile/nonvolatile memory
EP0025054A1 (en) * 1979-03-13 1981-03-18 Ncr Corporation Static volatile/non-volatile ram system
EP0025054A4 (en) * 1979-03-13 1981-10-13 Ncr Corp Static volatile/non-volatile ram system.
EP0311146A1 (en) * 1981-11-23 1989-04-12 Fairchild Semiconductor Corporation Self-refreshing memory cell
EP0387101A2 (en) * 1989-03-10 1990-09-12 Seiko Instruments Inc. Semi-conductor non-volatile memory and method of writing the same
EP0387101A3 (en) * 1989-03-10 1992-07-22 Seiko Instruments Inc. Semi-conductor non-volatile memory and method of writing the same
EP0412781A1 (en) * 1989-08-09 1991-02-13 Kawasaki Steel Corporation Test method for an integrated circuit including non-volatile memory cell capable of temporarily holding information
US5126969A (en) * 1989-08-09 1992-06-30 Kawasaki Steel Corporation Integrated circuit including non-volatile memory cell capable of temporarily holding information

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Legal Events

Date Code Title Description
RE Withdrawal of published application