JPS55160387A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS55160387A
JPS55160387A JP6803379A JP6803379A JPS55160387A JP S55160387 A JPS55160387 A JP S55160387A JP 6803379 A JP6803379 A JP 6803379A JP 6803379 A JP6803379 A JP 6803379A JP S55160387 A JPS55160387 A JP S55160387A
Authority
JP
Japan
Prior art keywords
state
column lines
chip
stability
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6803379A
Other languages
Japanese (ja)
Inventor
Masamichi Asano
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6803379A priority Critical patent/JPS55160387A/en
Priority to US06/153,951 priority patent/US4340943A/en
Priority to DE3020688A priority patent/DE3020688C2/en
Priority to GB8018012A priority patent/GB2056209B/en
Publication of JPS55160387A publication Critical patent/JPS55160387A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To improve the stability of a semiconductor memory by holding column lines of cell arrays approximately at the source-side potential of cells in an unselected state and until the state changes into a selected state and a set time passes. CONSTITUTION:Respective drains of MOS transistors 211 and 222- are connected to column lines 41 and 42-, the output terminal of delay circuit 22 is connected to their gates, and the supply terminal of voltage Vs is connected to respective sources. As a result, all column lines are held approximately at source-side potential Vs of memory cells in a chip-unselected state and until this state changes into a chip- selected state and the delay time of delay circuit 22 passes. Therefore, a bad influence on a read speed and malfunction can be prevented and the stability can also be improved.
JP6803379A 1979-05-31 1979-05-31 Semiconductor memory Pending JPS55160387A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6803379A JPS55160387A (en) 1979-05-31 1979-05-31 Semiconductor memory
US06/153,951 US4340943A (en) 1979-05-31 1980-05-28 Memory device utilizing MOS FETs
DE3020688A DE3020688C2 (en) 1979-05-31 1980-05-30 Storage device
GB8018012A GB2056209B (en) 1979-05-31 1980-06-02 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6803379A JPS55160387A (en) 1979-05-31 1979-05-31 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS55160387A true JPS55160387A (en) 1980-12-13

Family

ID=13362073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6803379A Pending JPS55160387A (en) 1979-05-31 1979-05-31 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS55160387A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167197A (en) * 1981-04-07 1982-10-14 Nec Corp Memory circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167197A (en) * 1981-04-07 1982-10-14 Nec Corp Memory circuit
JPS6218991B2 (en) * 1981-04-07 1987-04-25 Nippon Electric Co

Similar Documents

Publication Publication Date Title
JPS57127989A (en) Mos static type ram
JPS5564686A (en) Memory unit
EP0199501A3 (en) Cmos current sense amplifiers
JPS5677980A (en) Semiconductor memory device
JPS56140591A (en) Semiconductor memeory device
JPS5472641A (en) Voltage detection circuit
JPS5733493A (en) Semiconductor storage device
JPS55160387A (en) Semiconductor memory
JPS5694574A (en) Complementary mos sense circuit
JPS55101185A (en) Semiconductor memory device
JPS5423337A (en) Semiconductor memory unit
JPS55160388A (en) Semiconductor memory
JPS5493335A (en) Decoder circuit
JPS55101191A (en) Static random access memory cell circuit
JPS5479527A (en) Voltage sense circuit
FR2300391A1 (en) Selective access transistor memory - is fitted with each memory cell having storage circuit memory transistor and data conservation circuit
JPS5718086A (en) Read only memory
JPS5634184A (en) Semiconductor memory
JPS5485662A (en) Semiconductor device
JPS57152585A (en) Nonvolatile semiconductor memory
JPS5558891A (en) Semiconductor memory unit
JPS6472554A (en) Dynamic memory circuit
JPS5694585A (en) Memory transistor circuit
JPS5641595A (en) Semiconductor static memory unit
JPS55117790A (en) Memory circuit