JPS5485662A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5485662A
JPS5485662A JP15393877A JP15393877A JPS5485662A JP S5485662 A JPS5485662 A JP S5485662A JP 15393877 A JP15393877 A JP 15393877A JP 15393877 A JP15393877 A JP 15393877A JP S5485662 A JPS5485662 A JP S5485662A
Authority
JP
Japan
Prior art keywords
power supply
voltage
diffusion layer
output
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15393877A
Other languages
Japanese (ja)
Inventor
Tatsuo Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15393877A priority Critical patent/JPS5485662A/en
Publication of JPS5485662A publication Critical patent/JPS5485662A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/0185Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507Interface arrangements
    • H03K19/018521Interface arrangements of complementary type, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To enable voltage conversion without requiring external mounted components, power supply, and excessive power consumption, by connecting the isolation gate FET of depletion type built in at the output of two semiconductor devices using different power supply voltages. CONSTITUTION:Either of the source diffusion layer or drain diffusion layer of Tr56, P channel transistor having the performance of depletion type formed on one substrate is connected to the output 12 of P-MOS device constituted with transistors Tr52 and Tr51 of power supply voltage IVcc 1, the gate electrode is grounded, and another diffusion layer is connected to the output terminal 13. Further, the terminal 13 is connected to the input terminal 14 of C-MOS device of transistors Tr53, Tr54, and Tr55 in which the power supply voltage ¦VDD¦ is less than ¦Vcc¦. In this case, the voltage V out of the output terminal 13 to the voltage V in of the outut 12 can freely be selected with the ion injection condition of Tr55 and a given conversion value can be obtained with excellent accuracy.
JP15393877A 1977-12-20 1977-12-20 Semiconductor device Pending JPS5485662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15393877A JPS5485662A (en) 1977-12-20 1977-12-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15393877A JPS5485662A (en) 1977-12-20 1977-12-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5485662A true JPS5485662A (en) 1979-07-07

Family

ID=15573353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15393877A Pending JPS5485662A (en) 1977-12-20 1977-12-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5485662A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779735A (en) * 1980-11-05 1982-05-19 Toshiba Corp Semiconductor circuit
JPS6331313A (en) * 1986-07-21 1988-02-10 シ−メンス、アクチエンゲゼルシヤフト Integratable circuit device for level conversion
JPH02158213A (en) * 1988-12-09 1990-06-18 Nec Corp Output buffer circuit for cmos semiconductor integrated circuit
US7810611B2 (en) 2003-11-17 2010-10-12 Otis Elevator Company Elevator car assembly having an adjustable platform

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779735A (en) * 1980-11-05 1982-05-19 Toshiba Corp Semiconductor circuit
JPS6331313A (en) * 1986-07-21 1988-02-10 シ−メンス、アクチエンゲゼルシヤフト Integratable circuit device for level conversion
JPH02158213A (en) * 1988-12-09 1990-06-18 Nec Corp Output buffer circuit for cmos semiconductor integrated circuit
US7810611B2 (en) 2003-11-17 2010-10-12 Otis Elevator Company Elevator car assembly having an adjustable platform

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