JPS5593325A - Precharge circuit of mos transistor - Google Patents

Precharge circuit of mos transistor

Info

Publication number
JPS5593325A
JPS5593325A JP152779A JP152779A JPS5593325A JP S5593325 A JPS5593325 A JP S5593325A JP 152779 A JP152779 A JP 152779A JP 152779 A JP152779 A JP 152779A JP S5593325 A JPS5593325 A JP S5593325A
Authority
JP
Japan
Prior art keywords
gate
resistor
power supply
mos transistor
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP152779A
Other languages
Japanese (ja)
Inventor
Toshio Mitsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP152779A priority Critical patent/JPS5593325A/en
Publication of JPS5593325A publication Critical patent/JPS5593325A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals

Abstract

PURPOSE:To enable to obtain almost the same voltage as the power supply voltage as the precharge node voltage, by connecting the capacitor between the source and gate of MOSFET and connecting the resistor between the gate and the power supply. CONSTITUTION:The source side of N channel MOSFET 2 constitutes the precharge node. The gate of FET2 is connected to the power supply voltage Vcc via the resistor R, and the capacitor Cc boosting the gate potential VG is connected between the gate and the source. As the resistor R, high resistance polysilicon and diffusion resistance can be used, and it can also be possible to connect the depletion type MOSFET3 for the resistor.
JP152779A 1979-01-09 1979-01-09 Precharge circuit of mos transistor Pending JPS5593325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP152779A JPS5593325A (en) 1979-01-09 1979-01-09 Precharge circuit of mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP152779A JPS5593325A (en) 1979-01-09 1979-01-09 Precharge circuit of mos transistor

Publications (1)

Publication Number Publication Date
JPS5593325A true JPS5593325A (en) 1980-07-15

Family

ID=11503977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP152779A Pending JPS5593325A (en) 1979-01-09 1979-01-09 Precharge circuit of mos transistor

Country Status (1)

Country Link
JP (1) JPS5593325A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153029A (en) * 1978-05-18 1979-12-01 Siemens Ag Method of and device for automatically or semiiautomatically focusing
US4988902A (en) * 1989-05-24 1991-01-29 Harris Corporation Semiconductor transmission gate with capacitance compensation
JP2012065042A (en) * 2010-09-14 2012-03-29 Fujitsu Semiconductor Ltd Logic circuit and memory using the same
CN103326699A (en) * 2012-03-22 2013-09-25 富士通半导体股份有限公司 Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153029A (en) * 1978-05-18 1979-12-01 Siemens Ag Method of and device for automatically or semiiautomatically focusing
US4988902A (en) * 1989-05-24 1991-01-29 Harris Corporation Semiconductor transmission gate with capacitance compensation
JP2012065042A (en) * 2010-09-14 2012-03-29 Fujitsu Semiconductor Ltd Logic circuit and memory using the same
CN103326699A (en) * 2012-03-22 2013-09-25 富士通半导体股份有限公司 Semiconductor device
JP2013198125A (en) * 2012-03-22 2013-09-30 Fujitsu Semiconductor Ltd Semiconductor device
CN103326699B (en) * 2012-03-22 2016-06-29 创世舫电子日本株式会社 Semiconductor device

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