JPS5794984A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5794984A
JPS5794984A JP17075580A JP17075580A JPS5794984A JP S5794984 A JPS5794984 A JP S5794984A JP 17075580 A JP17075580 A JP 17075580A JP 17075580 A JP17075580 A JP 17075580A JP S5794984 A JPS5794984 A JP S5794984A
Authority
JP
Japan
Prior art keywords
gate
load
circuit
storage device
igfet6
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17075580A
Other languages
Japanese (ja)
Other versions
JPS5936357B2 (en
Inventor
Shinichi Miyake
Tomio Yanagidaira
Noritoshi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP55170755A priority Critical patent/JPS5936357B2/en
Publication of JPS5794984A publication Critical patent/JPS5794984A/en
Publication of JPS5936357B2 publication Critical patent/JPS5936357B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To reduce the size of a load IGFET by using a field effect transistor (IGFET) of a load insulating gate type as a constant-current load. CONSTITUTION:A bias circuit 5 biasing the gate electrode of a load IGFET1 to a saturation region is formed by connecting a P channel bias setting IGFET6 whose gate and drain are connected together and a diffused resistance 7 with high impedance in series. Then, the potential of the drain elecrode of the IGFET6, obtained by the bias circuit 5, is supplied to the gate elecrode of each IGFET1 of a semiconductor storage device. Therefore, the FET1 is held at a gate potential automatically by the circuit 5 and the need for an auxiliary power source is eliminated to reduce the size of every FET1 by adding one circuit 5.
JP55170755A 1980-12-02 1980-12-02 semiconductor storage device Expired JPS5936357B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55170755A JPS5936357B2 (en) 1980-12-02 1980-12-02 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170755A JPS5936357B2 (en) 1980-12-02 1980-12-02 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5794984A true JPS5794984A (en) 1982-06-12
JPS5936357B2 JPS5936357B2 (en) 1984-09-03

Family

ID=15910780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55170755A Expired JPS5936357B2 (en) 1980-12-02 1980-12-02 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5936357B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449218A2 (en) * 1990-03-29 1991-10-02 Nec Corporation Semiconductor memory device having signal receiving facility fabricated from BI-CMOS circuits

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03113411U (en) * 1990-02-28 1991-11-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449218A2 (en) * 1990-03-29 1991-10-02 Nec Corporation Semiconductor memory device having signal receiving facility fabricated from BI-CMOS circuits

Also Published As

Publication number Publication date
JPS5936357B2 (en) 1984-09-03

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