JPS5662372A - Junction type field effect semiconductor device - Google Patents
Junction type field effect semiconductor deviceInfo
- Publication number
- JPS5662372A JPS5662372A JP13763879A JP13763879A JPS5662372A JP S5662372 A JPS5662372 A JP S5662372A JP 13763879 A JP13763879 A JP 13763879A JP 13763879 A JP13763879 A JP 13763879A JP S5662372 A JPS5662372 A JP S5662372A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- area
- drain
- semiconductor device
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To reduce an excessive gate leak current by a method wherein the second gate surrounding a drain is formed between the drain and the gate, then the second gate and a source are connected in cascade. CONSTITUTION:To the source area 5 is connected a gate electrode G2 having the second gate area 7 adjacent to a drain area 6 and being connected to the second gate area 7. When a voltage is applied between the drain terminal D and the source terminal S, each of their FETs (T1, T2) is applied with about half of VDS. Thereby, a current concentration is reduced at the channel area 2 to prevent excessive gate leak current from being generated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13763879A JPS5662372A (en) | 1979-10-26 | 1979-10-26 | Junction type field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13763879A JPS5662372A (en) | 1979-10-26 | 1979-10-26 | Junction type field effect semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5662372A true JPS5662372A (en) | 1981-05-28 |
Family
ID=15203312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13763879A Pending JPS5662372A (en) | 1979-10-26 | 1979-10-26 | Junction type field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5662372A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS574167A (en) * | 1980-06-10 | 1982-01-09 | Nec Corp | Junction type field-effect transistor |
US4942440A (en) * | 1982-10-25 | 1990-07-17 | General Electric Company | High voltage semiconductor devices with reduced on-resistance |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5041478A (en) * | 1973-08-17 | 1975-04-15 | ||
JPS5048879A (en) * | 1973-08-31 | 1975-05-01 | ||
JPS5447584A (en) * | 1977-09-22 | 1979-04-14 | Toshiba Corp | Junction type field effect transistor |
-
1979
- 1979-10-26 JP JP13763879A patent/JPS5662372A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5041478A (en) * | 1973-08-17 | 1975-04-15 | ||
JPS5048879A (en) * | 1973-08-31 | 1975-05-01 | ||
JPS5447584A (en) * | 1977-09-22 | 1979-04-14 | Toshiba Corp | Junction type field effect transistor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS574167A (en) * | 1980-06-10 | 1982-01-09 | Nec Corp | Junction type field-effect transistor |
US4942440A (en) * | 1982-10-25 | 1990-07-17 | General Electric Company | High voltage semiconductor devices with reduced on-resistance |
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