JPS5662372A - Junction type field effect semiconductor device - Google Patents

Junction type field effect semiconductor device

Info

Publication number
JPS5662372A
JPS5662372A JP13763879A JP13763879A JPS5662372A JP S5662372 A JPS5662372 A JP S5662372A JP 13763879 A JP13763879 A JP 13763879A JP 13763879 A JP13763879 A JP 13763879A JP S5662372 A JPS5662372 A JP S5662372A
Authority
JP
Japan
Prior art keywords
gate
area
drain
semiconductor device
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13763879A
Other languages
Japanese (ja)
Inventor
Yasuo Taira
Hiroshi Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13763879A priority Critical patent/JPS5662372A/en
Publication of JPS5662372A publication Critical patent/JPS5662372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce an excessive gate leak current by a method wherein the second gate surrounding a drain is formed between the drain and the gate, then the second gate and a source are connected in cascade. CONSTITUTION:To the source area 5 is connected a gate electrode G2 having the second gate area 7 adjacent to a drain area 6 and being connected to the second gate area 7. When a voltage is applied between the drain terminal D and the source terminal S, each of their FETs (T1, T2) is applied with about half of VDS. Thereby, a current concentration is reduced at the channel area 2 to prevent excessive gate leak current from being generated.
JP13763879A 1979-10-26 1979-10-26 Junction type field effect semiconductor device Pending JPS5662372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13763879A JPS5662372A (en) 1979-10-26 1979-10-26 Junction type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13763879A JPS5662372A (en) 1979-10-26 1979-10-26 Junction type field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5662372A true JPS5662372A (en) 1981-05-28

Family

ID=15203312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13763879A Pending JPS5662372A (en) 1979-10-26 1979-10-26 Junction type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5662372A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574167A (en) * 1980-06-10 1982-01-09 Nec Corp Junction type field-effect transistor
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5041478A (en) * 1973-08-17 1975-04-15
JPS5048879A (en) * 1973-08-31 1975-05-01
JPS5447584A (en) * 1977-09-22 1979-04-14 Toshiba Corp Junction type field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5041478A (en) * 1973-08-17 1975-04-15
JPS5048879A (en) * 1973-08-31 1975-05-01
JPS5447584A (en) * 1977-09-22 1979-04-14 Toshiba Corp Junction type field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574167A (en) * 1980-06-10 1982-01-09 Nec Corp Junction type field-effect transistor
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance

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