JPS5720475A - Negative resistance element - Google Patents

Negative resistance element

Info

Publication number
JPS5720475A
JPS5720475A JP9447280A JP9447280A JPS5720475A JP S5720475 A JPS5720475 A JP S5720475A JP 9447280 A JP9447280 A JP 9447280A JP 9447280 A JP9447280 A JP 9447280A JP S5720475 A JPS5720475 A JP S5720475A
Authority
JP
Japan
Prior art keywords
channel
negative resistance
source
resistance element
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9447280A
Other languages
Japanese (ja)
Inventor
Hideji Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9447280A priority Critical patent/JPS5720475A/en
Publication of JPS5720475A publication Critical patent/JPS5720475A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

PURPOSE:To obtain a negative resistance element with a limited occupation area by connecting a gate electrode to the substrate at the same potential with an N<-> channel contacting N<++>P<++> junction provided in an N<+> source of a depletion type MOSFET. CONSTITUTION:An N<+> source 12 and an N<+> drain 13 and an N<-> channel 14 are provided on a P<-> substrate 11 and a gate electrode 16 and a drain electrode 17 are formed through SiO2 15. A junction of an N<++> layer 18 and a P<++> layer 19 is formed depthwise on the channel 14 side of the source 13. As a result, a depletion type N channel MOSFET22 and a P channel JFET23 are connected in series through respective sources so that gates are connected to other corresponding drains. The drain 23 of the FET23 is grounded and positive voltage VD is applied to the FET22. Initially, both the FETs are 1-Marion. But with increase in the voltage VD, the FET23 is first cut off and finally, both are switched off completely thus shifting to negative resistance state from positive one. This provides a negative resistance element with a high degree of integration given area required for an FET-element array.
JP9447280A 1980-07-10 1980-07-10 Negative resistance element Pending JPS5720475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9447280A JPS5720475A (en) 1980-07-10 1980-07-10 Negative resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9447280A JPS5720475A (en) 1980-07-10 1980-07-10 Negative resistance element

Publications (1)

Publication Number Publication Date
JPS5720475A true JPS5720475A (en) 1982-02-02

Family

ID=14111216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9447280A Pending JPS5720475A (en) 1980-07-10 1980-07-10 Negative resistance element

Country Status (1)

Country Link
JP (1) JPS5720475A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730130A (en) * 1993-07-14 1995-01-31 Nec Corp Differentiated negative resistance diode and static memory
JPH0781449A (en) * 1993-09-09 1995-03-28 Nec Corp Automatic transmission switching position and speed change condition display device
JP2017162920A (en) * 2016-03-08 2017-09-14 東芝メモリ株式会社 Semiconductor device and manufacturing method of the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730130A (en) * 1993-07-14 1995-01-31 Nec Corp Differentiated negative resistance diode and static memory
JPH0781449A (en) * 1993-09-09 1995-03-28 Nec Corp Automatic transmission switching position and speed change condition display device
JP2017162920A (en) * 2016-03-08 2017-09-14 東芝メモリ株式会社 Semiconductor device and manufacturing method of the same

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