JPS57123726A - Mis semiconductor device - Google Patents

Mis semiconductor device

Info

Publication number
JPS57123726A
JPS57123726A JP56007950A JP795081A JPS57123726A JP S57123726 A JPS57123726 A JP S57123726A JP 56007950 A JP56007950 A JP 56007950A JP 795081 A JP795081 A JP 795081A JP S57123726 A JPS57123726 A JP S57123726A
Authority
JP
Japan
Prior art keywords
channel
diode
semiconductor device
output
channel part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56007950A
Other languages
Japanese (ja)
Inventor
Mitsuo Ito
Shigeo Otaka
Hideshi Ito
Kazutoshi Ashikawa
Tetsuo Iijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56007950A priority Critical patent/JPS57123726A/en
Publication of JPS57123726A publication Critical patent/JPS57123726A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/02Shaping pulses by amplifying
    • H03K5/023Shaping pulses by amplifying using field effect transistors

Abstract

PURPOSE:To reduce output distortion greatly by increasing the forward voltage drop of a diode by an MOSFET used for a PWM output circuit. CONSTITUTION:With regard to MISFETs Q1 and Q2, their substrates 7 and substrate electrodes 8 are in nonohmic contact at least at the output sides, e.g., in regions under the drains, so that the ON characteristics of a diode D1 between the source and drain of one N channel MOSFETQ2 are in conformity with ON resistance via the channel part of the other P channel MOSFETQ1. Therefore, a current flows through the channel part and forward and backward ON resistances are equal, reducing output distortion greatly.
JP56007950A 1981-01-23 1981-01-23 Mis semiconductor device Pending JPS57123726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56007950A JPS57123726A (en) 1981-01-23 1981-01-23 Mis semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56007950A JPS57123726A (en) 1981-01-23 1981-01-23 Mis semiconductor device

Publications (1)

Publication Number Publication Date
JPS57123726A true JPS57123726A (en) 1982-08-02

Family

ID=11679766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56007950A Pending JPS57123726A (en) 1981-01-23 1981-01-23 Mis semiconductor device

Country Status (1)

Country Link
JP (1) JPS57123726A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63314017A (en) * 1987-06-17 1988-12-22 Matsushita Electric Ind Co Ltd Pwm signal output circuit
JPH0474474A (en) * 1990-07-16 1992-03-09 Matsushita Electron Corp Semiconductor device
JP2006237859A (en) * 2005-02-23 2006-09-07 Rohm Co Ltd D-class amplifier, signal amplifier circuit using same, and electronic apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63314017A (en) * 1987-06-17 1988-12-22 Matsushita Electric Ind Co Ltd Pwm signal output circuit
JPH0474474A (en) * 1990-07-16 1992-03-09 Matsushita Electron Corp Semiconductor device
JP2006237859A (en) * 2005-02-23 2006-09-07 Rohm Co Ltd D-class amplifier, signal amplifier circuit using same, and electronic apparatus

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