JPS57177554A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57177554A
JPS57177554A JP56062466A JP6246681A JPS57177554A JP S57177554 A JPS57177554 A JP S57177554A JP 56062466 A JP56062466 A JP 56062466A JP 6246681 A JP6246681 A JP 6246681A JP S57177554 A JPS57177554 A JP S57177554A
Authority
JP
Japan
Prior art keywords
layer
ratch
substrate
constitution
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56062466A
Other languages
Japanese (ja)
Inventor
Satoshi Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56062466A priority Critical patent/JPS57177554A/en
Publication of JPS57177554A publication Critical patent/JPS57177554A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

PURPOSE:To protect the ratch up by a method wherein the SChottky barrier diode SBD with an unique constitution is arranged in the P channel FET on the CMOS unit. CONSTITUTION:The P<+> layer 121 and the N<+> layer 117 of the P and N channel MISFET provided on the N type Si substrate 101 are connected to the other by means of the Al wiring 130 between the electrodes 126 and 123 while the Al electrode 125 is provided coming into contact with the P<+> layer 120 and the N type substrate 101 and the P<+> layer 120 is connected to the input terminal at the region A to insert the SBD into the region B where the input terminal and the N type substrate 101 come into contact with each other. Likewise in the N<+> layer 118, the Al electrode 124 comes into contact with the N<+> layer 118 and the P layer 104, however, no ratch up happens because the Al 124 shortcircuits the emitter and the base of the parasitic transistor. In this constitution, no ratch up happens, because when an excessive circuit is instantaneously input into an external electrode, most of the current flows into the substrate 101 causing no positive feedback phenomenon. Consequently the upper limit voltage in the normal operation as a CMOS unit is remarkably boosted.
JP56062466A 1981-04-27 1981-04-27 Semiconductor integrated circuit device Pending JPS57177554A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062466A JPS57177554A (en) 1981-04-27 1981-04-27 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062466A JPS57177554A (en) 1981-04-27 1981-04-27 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57177554A true JPS57177554A (en) 1982-11-01

Family

ID=13201004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062466A Pending JPS57177554A (en) 1981-04-27 1981-04-27 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57177554A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411359A (en) * 1987-07-03 1989-01-13 Yamaha Corp Integrated circuit device
JPH031545A (en) * 1989-05-29 1991-01-08 Sony Corp Mis transistor and manufacture thereof
US8215508B2 (en) 2007-08-21 2012-07-10 Nalge Nunc International Corporation Centrifuge bottle closure and assembly thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211880A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS54131890A (en) * 1978-04-05 1979-10-13 Toshiba Corp Semiconductor device
JPS5618459A (en) * 1979-07-24 1981-02-21 Itt Monolithic integrated ccmos circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211880A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS54131890A (en) * 1978-04-05 1979-10-13 Toshiba Corp Semiconductor device
JPS5618459A (en) * 1979-07-24 1981-02-21 Itt Monolithic integrated ccmos circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411359A (en) * 1987-07-03 1989-01-13 Yamaha Corp Integrated circuit device
JPH031545A (en) * 1989-05-29 1991-01-08 Sony Corp Mis transistor and manufacture thereof
US8215508B2 (en) 2007-08-21 2012-07-10 Nalge Nunc International Corporation Centrifuge bottle closure and assembly thereof

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