JPS5211880A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5211880A
JPS5211880A JP50087913A JP8791375A JPS5211880A JP S5211880 A JPS5211880 A JP S5211880A JP 50087913 A JP50087913 A JP 50087913A JP 8791375 A JP8791375 A JP 8791375A JP S5211880 A JPS5211880 A JP S5211880A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
effect
latch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50087913A
Other languages
Japanese (ja)
Inventor
Kazuo Sato
Mitsuhiko Ueno
Yasoji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50087913A priority Critical patent/JPS5211880A/en
Priority to GB2976176A priority patent/GB1558502A/en
Publication of JPS5211880A publication Critical patent/JPS5211880A/en
Priority to MY8100315A priority patent/MY8100315A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:The latch up phenomenon due to the parasitic thyristor effect in a complementary field-effect transistor circuit (CMOS circuit) shall be prevented.
JP50087913A 1975-07-18 1975-07-18 Semiconductor integrated circuit device Pending JPS5211880A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50087913A JPS5211880A (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device
GB2976176A GB1558502A (en) 1975-07-18 1976-07-16 Semiconductor integrated circuit device
MY8100315A MY8100315A (en) 1975-07-18 1981-12-30 Semiconductor r circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087913A JPS5211880A (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5211880A true JPS5211880A (en) 1977-01-29

Family

ID=13928147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50087913A Pending JPS5211880A (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5211880A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618459A (en) * 1979-07-24 1981-02-21 Itt Monolithic integrated ccmos circuit
JPS57177554A (en) * 1981-04-27 1982-11-01 Hitachi Ltd Semiconductor integrated circuit device
JPS594068A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Integrated circuit
JPS6164152A (en) * 1984-09-06 1986-04-02 Fujitsu Ltd C-mos circuit
JPS6230361A (en) * 1985-07-31 1987-02-09 Nec Corp Cmos input protecting circuit
JP2009238973A (en) * 2008-03-27 2009-10-15 Oki Semiconductor Co Ltd Esd protection device and method of manufacturing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618459A (en) * 1979-07-24 1981-02-21 Itt Monolithic integrated ccmos circuit
JPS57177554A (en) * 1981-04-27 1982-11-01 Hitachi Ltd Semiconductor integrated circuit device
JPS594068A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Integrated circuit
JPS6244426B2 (en) * 1982-06-30 1987-09-21 Fujitsu Ltd
JPS6164152A (en) * 1984-09-06 1986-04-02 Fujitsu Ltd C-mos circuit
JPS6230361A (en) * 1985-07-31 1987-02-09 Nec Corp Cmos input protecting circuit
JP2009238973A (en) * 2008-03-27 2009-10-15 Oki Semiconductor Co Ltd Esd protection device and method of manufacturing the same

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