MY8100315A - Semiconductor r circuit device - Google Patents

Semiconductor r circuit device

Info

Publication number
MY8100315A
MY8100315A MY8100315A MY8100315A MY8100315A MY 8100315 A MY8100315 A MY 8100315A MY 8100315 A MY8100315 A MY 8100315A MY 8100315 A MY8100315 A MY 8100315A MY 8100315 A MY8100315 A MY 8100315A
Authority
MY
Malaysia
Prior art keywords
semiconductor
circuit device
circuit
Prior art date
Application number
MY8100315A
Inventor
Kazuo Satou
Mitsuhiko Ueno
Yasoji Suzuki
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP50087912A external-priority patent/JPS5211879A/en
Priority claimed from JP50087918A external-priority patent/JPS5211885A/en
Priority claimed from JP50087913A external-priority patent/JPS5211880A/en
Priority claimed from JP50087916A external-priority patent/JPS6048905B2/en
Priority claimed from JP50087915A external-priority patent/JPS5211882A/en
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of MY8100315A publication Critical patent/MY8100315A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
MY8100315A 1975-07-18 1981-12-30 Semiconductor r circuit device MY8100315A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP50087912A JPS5211879A (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device
JP50087918A JPS5211885A (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device
JP50087913A JPS5211880A (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device
JP50087916A JPS6048905B2 (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device
JP50087915A JPS5211882A (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
MY8100315A true MY8100315A (en) 1981-12-31

Family

ID=27525313

Family Applications (1)

Application Number Title Priority Date Filing Date
MY8100315A MY8100315A (en) 1975-07-18 1981-12-30 Semiconductor r circuit device

Country Status (2)

Country Link
GB (1) GB1558502A (en)
MY (1) MY8100315A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
JPS60231356A (en) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp Complementary type metal-oxide-film semiconductor integrated circuit device
DE4110551C1 (en) * 1991-03-30 1992-07-23 Ita Ingenieurbuero Fuer Testaufgaben Gmbh, 2000 Hamburg, De

Also Published As

Publication number Publication date
GB1558502A (en) 1980-01-03

Similar Documents

Publication Publication Date Title
JPS57118667A (en) Integrated circuit semiconductor device
JPS5245288A (en) Semiconductor device
JPS51117880A (en) Semiconductor device
JPS527678A (en) Semiconductor device
JPS5216990A (en) Semiconductor device
GB1542651A (en) Semiconductor devices
JPS56162870A (en) Semiconductor device
ZA766145B (en) Semiconductor devices
JPS51148384A (en) Semiconductor circuit
GB1558349A (en) Making semiconductor device
JPS5279661A (en) Semiconductor device
GB1553417A (en) Semiconductor device manufacture
GB1552161A (en) Semiconductor devices
JPS51123083A (en) Integrated semiconductor device
JPS5238892A (en) Semiconductor device
GB1557961A (en) Semiconductor circuits
GB1554273A (en) Semiconductor device manufacture
JPS5234676A (en) Semiconductor device
JPS51129146A (en) Semiconductor circuit
JPS52119068A (en) Semiconductor device
JPS529380A (en) Semiconductor device
JPS5252574A (en) Integrated circuit device
GB1550834A (en) Semiconductor devices
JPS5270317A (en) Transistor circuit
JPS57141970A (en) Semiconductor device