JPS5211783A - Field effect transistor for integrated circuits - Google Patents

Field effect transistor for integrated circuits

Info

Publication number
JPS5211783A
JPS5211783A JP8787775A JP8787775A JPS5211783A JP S5211783 A JPS5211783 A JP S5211783A JP 8787775 A JP8787775 A JP 8787775A JP 8787775 A JP8787775 A JP 8787775A JP S5211783 A JPS5211783 A JP S5211783A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
integrated circuits
simplify
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8787775A
Other languages
Japanese (ja)
Inventor
Hideshi Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOUYOU DENGU SEISAKUSHIYO KK
TOYO DENGU SEISAKUSHIYO KK
Rohm Co Ltd
Original Assignee
TOUYOU DENGU SEISAKUSHIYO KK
TOYO DENGU SEISAKUSHIYO KK
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOUYOU DENGU SEISAKUSHIYO KK, TOYO DENGU SEISAKUSHIYO KK, Rohm Co Ltd filed Critical TOUYOU DENGU SEISAKUSHIYO KK
Priority to JP8787775A priority Critical patent/JPS5211783A/en
Publication of JPS5211783A publication Critical patent/JPS5211783A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To simplify the placing of an FET side by side by etching the base area formed simultaneously with that for a bipolar transistor.
JP8787775A 1975-07-17 1975-07-17 Field effect transistor for integrated circuits Pending JPS5211783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8787775A JPS5211783A (en) 1975-07-17 1975-07-17 Field effect transistor for integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8787775A JPS5211783A (en) 1975-07-17 1975-07-17 Field effect transistor for integrated circuits

Publications (1)

Publication Number Publication Date
JPS5211783A true JPS5211783A (en) 1977-01-28

Family

ID=13927082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8787775A Pending JPS5211783A (en) 1975-07-17 1975-07-17 Field effect transistor for integrated circuits

Country Status (1)

Country Link
JP (1) JPS5211783A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01106356U (en) * 1988-01-09 1989-07-18
JPH01132461U (en) * 1989-02-13 1989-09-08

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01106356U (en) * 1988-01-09 1989-07-18
JPH0528139Y2 (en) * 1988-01-09 1993-07-19
JPH01132461U (en) * 1989-02-13 1989-09-08

Similar Documents

Publication Publication Date Title
JPS543480A (en) Manufacture of semiconductor device
FR2300417A1 (en) INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY PNP-NPN TRANSISTORS
JPS5211783A (en) Field effect transistor for integrated circuits
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS5211880A (en) Semiconductor integrated circuit device
JPS5275987A (en) Gate protecting device
JPS5244188A (en) Semiconductor integrated circuit and process for production of the sam e
JPS51140490A (en) Lateral transistor
JPS5211883A (en) Semiconductor integrated circuit device
JPS5211879A (en) Semiconductor integrated circuit device
JPS545392A (en) Semiconductor integrated circuit and its manufacture
NL7614428A (en) INTEGRATED CIRCUIT WITH COMPLEMENTARY BIPOLAR TRANSISTORS.
JPS5283185A (en) Semiconductor device
JPS52186A (en) Semiconductor
JPS5211885A (en) Semiconductor integrated circuit device
JPS5211882A (en) Semiconductor integrated circuit device
JPS5245885A (en) Semiconductor integrated circuit device and process for production of same
NL7614383A (en) INTEGRATED CIRCUIT WITH COMPLEMENTARY BI-POLAR TRANSISTORS.
JPS5280784A (en) Insulated gate fype field-effect transistor
JPS526036A (en) Semiconductor memory circuit
JPS539488A (en) Production of semiconductor device
JPS5211884A (en) Semiconductor integrated circuit device
JPS5211878A (en) Semiconductor integrated circuit device
JPS5210080A (en) Method for manufacturing semiconductor device