JPS5283185A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5283185A
JPS5283185A JP15850375A JP15850375A JPS5283185A JP S5283185 A JPS5283185 A JP S5283185A JP 15850375 A JP15850375 A JP 15850375A JP 15850375 A JP15850375 A JP 15850375A JP S5283185 A JPS5283185 A JP S5283185A
Authority
JP
Japan
Prior art keywords
semiconductor device
good
iil
well
hole injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15850375A
Other languages
Japanese (ja)
Inventor
Tsuneo Funatsu
Yoshisue Sakai
Yoshinori Morita
Osamu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15850375A priority Critical patent/JPS5283185A/en
Publication of JPS5283185A publication Critical patent/JPS5283185A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an IIL having good characteristics up to large current regions as well as good switching characteristics by performing effective hole injection to the base region of a PNP type transistor.
JP15850375A 1975-12-31 1975-12-31 Semiconductor device Pending JPS5283185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15850375A JPS5283185A (en) 1975-12-31 1975-12-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15850375A JPS5283185A (en) 1975-12-31 1975-12-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5283185A true JPS5283185A (en) 1977-07-11

Family

ID=15673149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15850375A Pending JPS5283185A (en) 1975-12-31 1975-12-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5283185A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53105384A (en) * 1977-02-25 1978-09-13 Mitsubishi Electric Corp Semiconductor device
JPS55115356A (en) * 1979-02-28 1980-09-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53105384A (en) * 1977-02-25 1978-09-13 Mitsubishi Electric Corp Semiconductor device
JPS55115356A (en) * 1979-02-28 1980-09-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device

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