JPS5210088A - Structure of semiconductor integrated circuit - Google Patents
Structure of semiconductor integrated circuitInfo
- Publication number
- JPS5210088A JPS5210088A JP50086409A JP8640975A JPS5210088A JP S5210088 A JPS5210088 A JP S5210088A JP 50086409 A JP50086409 A JP 50086409A JP 8640975 A JP8640975 A JP 8640975A JP S5210088 A JPS5210088 A JP S5210088A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- charged carrier
- npn
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/024—Integrated injection logic structures [I2L] using field effect injector structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To make possible to control an injection current of a charged carrier as well as to increase an integration factor by constructing a charged carrier injection type logic circuit by MOS Tr and npn Tr.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50086409A JPS5832505B2 (en) | 1975-07-15 | 1975-07-15 | semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50086409A JPS5832505B2 (en) | 1975-07-15 | 1975-07-15 | semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5210088A true JPS5210088A (en) | 1977-01-26 |
JPS5832505B2 JPS5832505B2 (en) | 1983-07-13 |
Family
ID=13886055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50086409A Expired JPS5832505B2 (en) | 1975-07-15 | 1975-07-15 | semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5832505B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5245885A (en) * | 1975-10-08 | 1977-04-11 | Hitachi Ltd | Semiconductor integrated circuit device and process for production of same |
JPH04164365A (en) * | 1990-10-29 | 1992-06-10 | Matsushita Electron Corp | Gate circuit and gate device |
-
1975
- 1975-07-15 JP JP50086409A patent/JPS5832505B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5245885A (en) * | 1975-10-08 | 1977-04-11 | Hitachi Ltd | Semiconductor integrated circuit device and process for production of same |
JPH04164365A (en) * | 1990-10-29 | 1992-06-10 | Matsushita Electron Corp | Gate circuit and gate device |
Also Published As
Publication number | Publication date |
---|---|
JPS5832505B2 (en) | 1983-07-13 |
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