JPS51147274A - Manufacturing process of integrated circuit - Google Patents

Manufacturing process of integrated circuit

Info

Publication number
JPS51147274A
JPS51147274A JP50071596A JP7159675A JPS51147274A JP S51147274 A JPS51147274 A JP S51147274A JP 50071596 A JP50071596 A JP 50071596A JP 7159675 A JP7159675 A JP 7159675A JP S51147274 A JPS51147274 A JP S51147274A
Authority
JP
Japan
Prior art keywords
integrated circuit
manufacturing process
typesi
mosts
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50071596A
Other languages
Japanese (ja)
Inventor
Katsuyuki Inayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50071596A priority Critical patent/JPS51147274A/en
Publication of JPS51147274A publication Critical patent/JPS51147274A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To provide, in a silicon gate CMOS IC, improved free wiring and operating speed by providing every gate electrode with an N-typeSi, and also performing ion-implantation for the threshold value voltage of one of MOSTs.
JP50071596A 1975-06-13 1975-06-13 Manufacturing process of integrated circuit Pending JPS51147274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50071596A JPS51147274A (en) 1975-06-13 1975-06-13 Manufacturing process of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071596A JPS51147274A (en) 1975-06-13 1975-06-13 Manufacturing process of integrated circuit

Publications (1)

Publication Number Publication Date
JPS51147274A true JPS51147274A (en) 1976-12-17

Family

ID=13465194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071596A Pending JPS51147274A (en) 1975-06-13 1975-06-13 Manufacturing process of integrated circuit

Country Status (1)

Country Link
JP (1) JPS51147274A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111786A (en) * 1978-02-21 1979-09-01 Nec Corp Manufacture for complementary silicon gate mos field effect semiconductor device
JPS5799038A (en) * 1980-12-12 1982-06-19 Seiko Epson Corp Interface circuit with transistor-transistor logic level

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979189A (en) * 1972-11-01 1974-07-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979189A (en) * 1972-11-01 1974-07-31

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111786A (en) * 1978-02-21 1979-09-01 Nec Corp Manufacture for complementary silicon gate mos field effect semiconductor device
JPS5799038A (en) * 1980-12-12 1982-06-19 Seiko Epson Corp Interface circuit with transistor-transistor logic level

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