JPS5799038A - Interface circuit with transistor-transistor logic level - Google Patents

Interface circuit with transistor-transistor logic level

Info

Publication number
JPS5799038A
JPS5799038A JP55175595A JP17559580A JPS5799038A JP S5799038 A JPS5799038 A JP S5799038A JP 55175595 A JP55175595 A JP 55175595A JP 17559580 A JP17559580 A JP 17559580A JP S5799038 A JPS5799038 A JP S5799038A
Authority
JP
Japan
Prior art keywords
channel
transistor
interface circuit
mosfet
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55175595A
Other languages
Japanese (ja)
Inventor
Nobuyuki Miyazaki
Zenzo Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55175595A priority Critical patent/JPS5799038A/en
Publication of JPS5799038A publication Critical patent/JPS5799038A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To lower the threshold level without increasing the channel width of an N type MOSEFT, by using an inverter no doped with impurity to a channel of a P type MOSFET. CONSTITUTION:A P type impurity is doped to a channel 101 of an N channel MOSFET formed on a P type impurity diffusion region 107, and the P type impurity is not doped to a channel section 201 of a P channel MOSFET. Thus, the threshold voltage of the P channel MOSFET can be decreased, and when it is used for an interface circuit from TTL level to CMOSes, the threshold voltage of the inverter can be lowered to 1.4V taking maximum noise margin, without increasing the channel width of the N channel MOSFET.
JP55175595A 1980-12-12 1980-12-12 Interface circuit with transistor-transistor logic level Pending JPS5799038A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55175595A JPS5799038A (en) 1980-12-12 1980-12-12 Interface circuit with transistor-transistor logic level

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55175595A JPS5799038A (en) 1980-12-12 1980-12-12 Interface circuit with transistor-transistor logic level

Publications (1)

Publication Number Publication Date
JPS5799038A true JPS5799038A (en) 1982-06-19

Family

ID=15998825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55175595A Pending JPS5799038A (en) 1980-12-12 1980-12-12 Interface circuit with transistor-transistor logic level

Country Status (1)

Country Link
JP (1) JPS5799038A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0538126U (en) * 1991-10-25 1993-05-25 株式会社クボタ Connection structure of roof panel and shed frame

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115639A (en) * 1973-03-07 1974-11-05
JPS51147274A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Manufacturing process of integrated circuit
JPS5396771A (en) * 1977-02-04 1978-08-24 Nec Corp Production of integrated circuit device
JPS54112180A (en) * 1978-02-22 1979-09-01 Nec Corp Manufacture of complementary type insulation gate field effect semiconductor device
JPS5543842A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Manufacture of al gate cmos ic

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115639A (en) * 1973-03-07 1974-11-05
JPS51147274A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Manufacturing process of integrated circuit
JPS5396771A (en) * 1977-02-04 1978-08-24 Nec Corp Production of integrated circuit device
JPS54112180A (en) * 1978-02-22 1979-09-01 Nec Corp Manufacture of complementary type insulation gate field effect semiconductor device
JPS5543842A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Manufacture of al gate cmos ic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0538126U (en) * 1991-10-25 1993-05-25 株式会社クボタ Connection structure of roof panel and shed frame

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