JPS5772388A - Junction type field-effect semiconductor device and its manufacdure - Google Patents

Junction type field-effect semiconductor device and its manufacdure

Info

Publication number
JPS5772388A
JPS5772388A JP14833080A JP14833080A JPS5772388A JP S5772388 A JPS5772388 A JP S5772388A JP 14833080 A JP14833080 A JP 14833080A JP 14833080 A JP14833080 A JP 14833080A JP S5772388 A JPS5772388 A JP S5772388A
Authority
JP
Japan
Prior art keywords
region
gate
manufacdure
semiconductor device
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14833080A
Other languages
Japanese (ja)
Inventor
Norio Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14833080A priority Critical patent/JPS5772388A/en
Publication of JPS5772388A publication Critical patent/JPS5772388A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Abstract

PURPOSE:To prevent a breakdown voltage drop generated at an overlapping section by obviating substantial overlap between the first gate region and a drain region and forming a gate oxide film in the same length as the first gate region. CONSTITUTION:An N<+> type source region 2 and the drain region 3 are shaped to a P type semiconductor layer 1, and a channel region 8 is formed between both regions and the first gate region 10 on the channel region. Here, the first gate region 10 is under a condition that it contacts with the source region 2 and the drain region 3, and is shaped so as not to substantially overlap on both regions. The gate oxide film 4b is molded in the same length as the first gate region 10. Accordingly, the breakdown voltage drop inevitably generated where the first gate region and the drain region overlap can be prevented.
JP14833080A 1980-10-24 1980-10-24 Junction type field-effect semiconductor device and its manufacdure Pending JPS5772388A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14833080A JPS5772388A (en) 1980-10-24 1980-10-24 Junction type field-effect semiconductor device and its manufacdure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14833080A JPS5772388A (en) 1980-10-24 1980-10-24 Junction type field-effect semiconductor device and its manufacdure

Publications (1)

Publication Number Publication Date
JPS5772388A true JPS5772388A (en) 1982-05-06

Family

ID=15450357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14833080A Pending JPS5772388A (en) 1980-10-24 1980-10-24 Junction type field-effect semiconductor device and its manufacdure

Country Status (1)

Country Link
JP (1) JPS5772388A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242567A (en) * 1985-08-20 1987-02-24 Matsushita Electronics Corp Manufacture of field effect transistor
JPS62196359U (en) * 1986-06-05 1987-12-14
JPH01225169A (en) * 1988-03-04 1989-09-08 Toshiba Corp Manufacture of field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242567A (en) * 1985-08-20 1987-02-24 Matsushita Electronics Corp Manufacture of field effect transistor
JPS62196359U (en) * 1986-06-05 1987-12-14
JPH01225169A (en) * 1988-03-04 1989-09-08 Toshiba Corp Manufacture of field effect transistor

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