JPS6489367A - High breakdown strength semiconductor device - Google Patents
High breakdown strength semiconductor deviceInfo
- Publication number
- JPS6489367A JPS6489367A JP62243618A JP24361887A JPS6489367A JP S6489367 A JPS6489367 A JP S6489367A JP 62243618 A JP62243618 A JP 62243618A JP 24361887 A JP24361887 A JP 24361887A JP S6489367 A JPS6489367 A JP S6489367A
- Authority
- JP
- Japan
- Prior art keywords
- region
- breakdown strength
- semiconductor device
- high breakdown
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce a leakage current by forming the edge of a channel stopper region to arrive at the surface of a semiconductor substrate, forming a drain region separately from the edge of the stopper region, and injecting an impurity therebetween. CONSTITUTION:A channel stopper region 2 is formed on a whole surface directly under a field insulating film 3, and a transistor region, such as a drain region 7 is formed inside an opening formed at the film 3. The edges of at least drains 7, 7A of the transistor region and a field insulating film 3 are isolated as shown by an arrow A1. An impurity for regulating a threshold voltage is injected to a substrate 1 between the regions 2 and 7. Thus, its breakdown strength is improved, and a leakage current can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62243618A JPH0770714B2 (en) | 1987-09-30 | 1987-09-30 | High voltage semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62243618A JPH0770714B2 (en) | 1987-09-30 | 1987-09-30 | High voltage semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6489367A true JPS6489367A (en) | 1989-04-03 |
JPH0770714B2 JPH0770714B2 (en) | 1995-07-31 |
Family
ID=17106500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62243618A Expired - Lifetime JPH0770714B2 (en) | 1987-09-30 | 1987-09-30 | High voltage semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0770714B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06216380A (en) * | 1992-10-07 | 1994-08-05 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
EP0804830A1 (en) * | 1995-11-21 | 1997-11-05 | Information Storage Devices, Inc. | A clocked high voltage switch |
US20120018805A1 (en) * | 2010-07-20 | 2012-01-26 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
JP2013247300A (en) * | 2012-05-28 | 2013-12-09 | Canon Inc | Semiconductor device, semiconductor device manufacturing method and liquid discharge device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63305562A (en) * | 1987-06-05 | 1988-12-13 | Sony Corp | Semiconductor device |
-
1987
- 1987-09-30 JP JP62243618A patent/JPH0770714B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63305562A (en) * | 1987-06-05 | 1988-12-13 | Sony Corp | Semiconductor device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06216380A (en) * | 1992-10-07 | 1994-08-05 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
EP0804830A1 (en) * | 1995-11-21 | 1997-11-05 | Information Storage Devices, Inc. | A clocked high voltage switch |
EP0804830A4 (en) * | 1995-11-21 | 1998-04-29 | Information Storage Devices | A clocked high voltage switch |
US20120018805A1 (en) * | 2010-07-20 | 2012-01-26 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
JP2012028378A (en) * | 2010-07-20 | 2012-02-09 | Toshiba Corp | Semiconductor device and method of manufacturing the same |
US9070769B2 (en) | 2010-07-20 | 2015-06-30 | Kabushiki Kaisha Toshiba | Semiconductor device with a depletion channel and method of manufacturing the same |
JP2013247300A (en) * | 2012-05-28 | 2013-12-09 | Canon Inc | Semiconductor device, semiconductor device manufacturing method and liquid discharge device |
Also Published As
Publication number | Publication date |
---|---|
JPH0770714B2 (en) | 1995-07-31 |
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