JPS57154875A - Mos semiconductor device - Google Patents
Mos semiconductor deviceInfo
- Publication number
- JPS57154875A JPS57154875A JP3943081A JP3943081A JPS57154875A JP S57154875 A JPS57154875 A JP S57154875A JP 3943081 A JP3943081 A JP 3943081A JP 3943081 A JP3943081 A JP 3943081A JP S57154875 A JPS57154875 A JP S57154875A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- insulating film
- region
- drain electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 5
- 230000006378 damage Effects 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To obtain an MOSFET with which the trouble of destruction caused by the breaking of an N-inversion layer at the point directly below an electrode can be prevented by a method wherein a gate shield electrode is provided between a channel stopper P<+> layer and a drain electrode on the insulating film having the thickly formed circumferential part. CONSTITUTION:An insulating film 2 having the thickly formed circumferential region, an N<+> drain region 4, a P<+> region 8 to be turned into a channel stopper, a high withstand viltage N<+> layer 10, an interlayer insulating film 11 consisting of PSG and the like, and a gate shielding electrode 12 and the like are provided on a P<+> type Si substrate 1. At this point, a drain electrode 7, consisting of Al which will be resistance-connected using the contact section 4A on the region 4, is extended on the insulating film 11. Also, the electrode 12 is provided in such a manner that a part of the gate electrode 6, consisting of a polycrystalline Si, for example, is extended on the insulating film 2 having the thickly formed circumferential region and that the electrode 12 is intersected with the drain electrode at the point located between the region 8 and the electrode 7. As a result, even when an N inversion layer is generated on the semiconductor surface underlying the circumferential insulating film by applying high voltage on the drain electrode, the N inversion layer breaks off at the point directly below the electrode 12, and the breakage caused by the leakage of current and the like can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3943081A JPS57154875A (en) | 1981-03-20 | 1981-03-20 | Mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3943081A JPS57154875A (en) | 1981-03-20 | 1981-03-20 | Mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57154875A true JPS57154875A (en) | 1982-09-24 |
Family
ID=12552773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3943081A Pending JPS57154875A (en) | 1981-03-20 | 1981-03-20 | Mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57154875A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60143649A (en) * | 1983-12-29 | 1985-07-29 | Hitachi Ltd | Multilayer interconnection structure for semiconductor device |
| US4785343A (en) * | 1985-06-07 | 1988-11-15 | Fujitsu Limited | MIS FET semiconductor device with improved leakage current |
-
1981
- 1981-03-20 JP JP3943081A patent/JPS57154875A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60143649A (en) * | 1983-12-29 | 1985-07-29 | Hitachi Ltd | Multilayer interconnection structure for semiconductor device |
| JPH0224382B2 (en) * | 1983-12-29 | 1990-05-29 | Hitachi Seisakusho Kk | |
| US4785343A (en) * | 1985-06-07 | 1988-11-15 | Fujitsu Limited | MIS FET semiconductor device with improved leakage current |
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