JPS56165356A - Mos semiconductor device - Google Patents

Mos semiconductor device

Info

Publication number
JPS56165356A
JPS56165356A JP6896480A JP6896480A JPS56165356A JP S56165356 A JPS56165356 A JP S56165356A JP 6896480 A JP6896480 A JP 6896480A JP 6896480 A JP6896480 A JP 6896480A JP S56165356 A JPS56165356 A JP S56165356A
Authority
JP
Japan
Prior art keywords
substrate
type
diode
region
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6896480A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Mitsuo Ito
Kazutoshi Ashikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6896480A priority Critical patent/JPS56165356A/en
Publication of JPS56165356A publication Critical patent/JPS56165356A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the functioning of a protective diode as a thyristor by a method wherein an n<+>-n substrate is used as a P channel MOSFET, and a peripheral n<+> region and a source region are not connected. CONSTITUTION:An n type epitaxial layer 11 is grown on an n<+> type Si substrate 10, and a p type diffusion region 15 serving as a protective diode is formed. An n<+> diffusion region 16 functioning as an anode of the diode is made up, and connected to a gate through wiring 18, and an n<+> diffusion layer 17 short-circuiting with the n substrate is formed to a peripheral section of the p type layer. The p<+> type source- drain regions 12, 13 of a p channel MOS transistor are formed, and an insulating gate 14 is formed. The source 12 and the n<+> substrate 10 are connected. When a negative voltage is applied to VGS, the currents of the diode are currents injected from the drain flow to the n<+> substrate side, and a thyristor phenomenon is not generated.
JP6896480A 1980-05-26 1980-05-26 Mos semiconductor device Pending JPS56165356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6896480A JPS56165356A (en) 1980-05-26 1980-05-26 Mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6896480A JPS56165356A (en) 1980-05-26 1980-05-26 Mos semiconductor device

Publications (1)

Publication Number Publication Date
JPS56165356A true JPS56165356A (en) 1981-12-18

Family

ID=13388864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6896480A Pending JPS56165356A (en) 1980-05-26 1980-05-26 Mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS56165356A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990014690A1 (en) * 1989-05-17 1990-11-29 David Sarnoff Research Center, Inc. Voltage stress alterable esd protection structure
US5010380A (en) * 1989-05-17 1991-04-23 David Sarnoff Research Center, Inc. Voltage stress alterable ESD protection structure
US5148250A (en) * 1988-08-16 1992-09-15 Siemens Aktiengesellschaft Bipolar transistor as protective element for integrated circuits

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148250A (en) * 1988-08-16 1992-09-15 Siemens Aktiengesellschaft Bipolar transistor as protective element for integrated circuits
WO1990014690A1 (en) * 1989-05-17 1990-11-29 David Sarnoff Research Center, Inc. Voltage stress alterable esd protection structure
US5010380A (en) * 1989-05-17 1991-04-23 David Sarnoff Research Center, Inc. Voltage stress alterable ESD protection structure

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