JPS648674A - Vertical mos-fet - Google Patents

Vertical mos-fet

Info

Publication number
JPS648674A
JPS648674A JP62164767A JP16476787A JPS648674A JP S648674 A JPS648674 A JP S648674A JP 62164767 A JP62164767 A JP 62164767A JP 16476787 A JP16476787 A JP 16476787A JP S648674 A JPS648674 A JP S648674A
Authority
JP
Japan
Prior art keywords
type
region
series
regions
zener diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62164767A
Other languages
Japanese (ja)
Inventor
Takayuki Kito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP62164767A priority Critical patent/JPS648674A/en
Publication of JPS648674A publication Critical patent/JPS648674A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To provide a DMOS FET having a protective diode which does not generate a parasitic thyristor operation by inserting two Zener diodes made of first and second conductivity type regions and connected in anti-series between a gate and a source. CONSTITUTION:A P-type region 40 and a P-type first conductivity type region 80 are formed on an N-type substrate 30 on which an N-type epitaxial layer 20 is laminated on an N<+> type substrate 10. An N<+> type region 50 is formed on the region 40, two N-type second conductivity type regions 82 are similarly formed on the region 80, and a P<++> type region 83 is formed therebetween. The regions 80, 82 and 83 become two Zener diodes connected in anti-series. Since the two Zener diodes connected in anti-series and a drain D are isolated by a P-N junction, when a surge voltage is applied to a gate, a surge energy is absorbed by the breakdown of the diodes, thereby eliminating a thyristor operation.
JP62164767A 1987-06-30 1987-06-30 Vertical mos-fet Pending JPS648674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62164767A JPS648674A (en) 1987-06-30 1987-06-30 Vertical mos-fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62164767A JPS648674A (en) 1987-06-30 1987-06-30 Vertical mos-fet

Publications (1)

Publication Number Publication Date
JPS648674A true JPS648674A (en) 1989-01-12

Family

ID=15799542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62164767A Pending JPS648674A (en) 1987-06-30 1987-06-30 Vertical mos-fet

Country Status (1)

Country Link
JP (1) JPS648674A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203380A (en) * 1989-12-29 1991-09-05 Nec Corp Protecting device for vertical type mos field effect transistor
JPH03236280A (en) * 1990-02-14 1991-10-22 Hitachi Ltd Semiconductor device
US5144926A (en) * 1990-08-29 1992-09-08 Zexel Corporation Fuel injection pump of distribution type
US20150008450A1 (en) * 2013-07-04 2015-01-08 Mitsubishi Electric Corporation Wide band gap semiconductor device
EP3979331A1 (en) * 2020-09-30 2022-04-06 Infineon Technologies AG Silicon carbide device with transistor cell and clamp region
EP3979330A1 (en) * 2020-09-30 2022-04-06 Infineon Technologies AG Silicon carbide device with transistor cell and clamp regions in a well region

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54112179A (en) * 1978-02-23 1979-09-01 Sony Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54112179A (en) * 1978-02-23 1979-09-01 Sony Corp Semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203380A (en) * 1989-12-29 1991-09-05 Nec Corp Protecting device for vertical type mos field effect transistor
JPH03236280A (en) * 1990-02-14 1991-10-22 Hitachi Ltd Semiconductor device
US5144926A (en) * 1990-08-29 1992-09-08 Zexel Corporation Fuel injection pump of distribution type
US20150008450A1 (en) * 2013-07-04 2015-01-08 Mitsubishi Electric Corporation Wide band gap semiconductor device
CN104282686A (en) * 2013-07-04 2015-01-14 三菱电机株式会社 Wide band gap semiconductor device
JP2015015329A (en) * 2013-07-04 2015-01-22 三菱電機株式会社 Wide-gap semiconductor device
US9472543B2 (en) * 2013-07-04 2016-10-18 Mitsubishi Electric Corporation Wide band gap semiconductor device
DE102014211903B4 (en) * 2013-07-04 2017-08-10 Mitsubishi Electric Corporation Wide bandgap semiconductor device
EP3979331A1 (en) * 2020-09-30 2022-04-06 Infineon Technologies AG Silicon carbide device with transistor cell and clamp region
EP3979330A1 (en) * 2020-09-30 2022-04-06 Infineon Technologies AG Silicon carbide device with transistor cell and clamp regions in a well region
US11876133B2 (en) 2020-09-30 2024-01-16 Infineon Technologies Ag Silicon carbide device with transistor cell and clamp region

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