JPS56114373A - Protection circuit of fet - Google Patents

Protection circuit of fet

Info

Publication number
JPS56114373A
JPS56114373A JP1748080A JP1748080A JPS56114373A JP S56114373 A JPS56114373 A JP S56114373A JP 1748080 A JP1748080 A JP 1748080A JP 1748080 A JP1748080 A JP 1748080A JP S56114373 A JPS56114373 A JP S56114373A
Authority
JP
Japan
Prior art keywords
gate
fet
source
surge
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1748080A
Other languages
Japanese (ja)
Other versions
JPS6231509B2 (en
Inventor
Shutaro Nanbu
Hiromitsu Takagi
Atsushi Nagashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1748080A priority Critical patent/JPS56114373A/en
Publication of JPS56114373A publication Critical patent/JPS56114373A/en
Publication of JPS6231509B2 publication Critical patent/JPS6231509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase a forward surge-proof property of FET to the same order as the backward surge-proof property of FET by a method wherein protective diodes having different zener voltages and being connected in series in the directions opposite to each other are provided between two gates and a source of the dual gate Schottky barrier type FET. CONSTITUTION:The protective diode is additionally connected to the dual gate Schottky barrier type FET comprising a first gate 1, source 2, second gate 3, drain 4. With this construction, for the diode 5, two diodes different in the zener voltages as V1, V2 (V1<V2) are connected in parallel and series for the construction, and connected in parallel between the first gate 1 and source 2 and between the second gate 3 and source 2 respectively. Thus, the surging energy absorbed by the diode 5 is increased, thereby enabling the surge withstand voltage in the forward direction to be improved to the order as high as the surge withstand voltage in the backward direction.
JP1748080A 1980-02-14 1980-02-14 Protection circuit of fet Granted JPS56114373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1748080A JPS56114373A (en) 1980-02-14 1980-02-14 Protection circuit of fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1748080A JPS56114373A (en) 1980-02-14 1980-02-14 Protection circuit of fet

Publications (2)

Publication Number Publication Date
JPS56114373A true JPS56114373A (en) 1981-09-08
JPS6231509B2 JPS6231509B2 (en) 1987-07-08

Family

ID=11945159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1748080A Granted JPS56114373A (en) 1980-02-14 1980-02-14 Protection circuit of fet

Country Status (1)

Country Link
JP (1) JPS56114373A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851577A (en) * 1981-09-22 1983-03-26 Matsushita Electric Ind Co Ltd Semiconductor device
JPS59100579A (en) * 1982-12-01 1984-06-09 Matsushita Electronics Corp Semiconductor device
JPS60257174A (en) * 1984-06-01 1985-12-18 Nec Corp Semiconductor device
JPS63151090A (en) * 1986-12-16 1988-06-23 Matsushita Electronics Corp Hall effect semiconductor device
US5428232A (en) * 1991-11-28 1995-06-27 Sony Corporation Field effect transistor apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851577A (en) * 1981-09-22 1983-03-26 Matsushita Electric Ind Co Ltd Semiconductor device
JPS59100579A (en) * 1982-12-01 1984-06-09 Matsushita Electronics Corp Semiconductor device
JPS60257174A (en) * 1984-06-01 1985-12-18 Nec Corp Semiconductor device
JPS63151090A (en) * 1986-12-16 1988-06-23 Matsushita Electronics Corp Hall effect semiconductor device
US5428232A (en) * 1991-11-28 1995-06-27 Sony Corporation Field effect transistor apparatus

Also Published As

Publication number Publication date
JPS6231509B2 (en) 1987-07-08

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