JPS5768071A - Semiconductor device with protective element - Google Patents

Semiconductor device with protective element

Info

Publication number
JPS5768071A
JPS5768071A JP55143348A JP14334880A JPS5768071A JP S5768071 A JPS5768071 A JP S5768071A JP 55143348 A JP55143348 A JP 55143348A JP 14334880 A JP14334880 A JP 14334880A JP S5768071 A JPS5768071 A JP S5768071A
Authority
JP
Japan
Prior art keywords
gate
substrate
type
resistor
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55143348A
Other languages
Japanese (ja)
Inventor
Eitetsu Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55143348A priority Critical patent/JPS5768071A/en
Publication of JPS5768071A publication Critical patent/JPS5768071A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Abstract

PURPOSE:To effectively prevent the damage of a gate in an MISFET by inserting a protective resistor between a gate electrode and a gate input terminal and two diodes connected reversely through the resistor between the gate electrode and a substrate. CONSTITUTION:Diodes 23, 24 are connected reversely through a resistor 20' in a distribution manner between a gate electrode 8 and a substrate electrode 9 (ground). Then, one diode reversely biased constantly is inserted irrespective of the polarity in the surge voltage, thereby preventing the gate damage due to application of surge voltage from the terminal side of a power source. An N type resistance region 20 formed in the P type layer 19 of an N type substrate can form the layer 19 simultaneously upon formation of the P type layer of N channel FET, the impurity density of the layers 19 and 20 are selected with respect to the N type substrate to set the breakdown voltage of the diodes 23, 24. With this construction, the structure is simple and has large protective effect.
JP55143348A 1980-10-14 1980-10-14 Semiconductor device with protective element Pending JPS5768071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55143348A JPS5768071A (en) 1980-10-14 1980-10-14 Semiconductor device with protective element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55143348A JPS5768071A (en) 1980-10-14 1980-10-14 Semiconductor device with protective element

Publications (1)

Publication Number Publication Date
JPS5768071A true JPS5768071A (en) 1982-04-26

Family

ID=15336694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55143348A Pending JPS5768071A (en) 1980-10-14 1980-10-14 Semiconductor device with protective element

Country Status (1)

Country Link
JP (1) JPS5768071A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021561A (en) * 1983-07-15 1985-02-02 Nec Corp Semiconductor protection device
CN1037044C (en) * 1988-12-20 1998-01-14 菲利浦电子有限公司 Protection of power integrated circuits against load voltage surges
KR100296147B1 (en) * 1992-06-29 2001-10-22 이데이 노부유끼 Semiconductor device and horizontal register of solid-state image sensing device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146975A (en) * 1978-05-10 1979-11-16 Nec Corp Protection circuit of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146975A (en) * 1978-05-10 1979-11-16 Nec Corp Protection circuit of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021561A (en) * 1983-07-15 1985-02-02 Nec Corp Semiconductor protection device
JPH0244156B2 (en) * 1983-07-15 1990-10-02 Nippon Electric Co
CN1037044C (en) * 1988-12-20 1998-01-14 菲利浦电子有限公司 Protection of power integrated circuits against load voltage surges
KR100296147B1 (en) * 1992-06-29 2001-10-22 이데이 노부유끼 Semiconductor device and horizontal register of solid-state image sensing device

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