JPS56133870A - Mos field effect semiconductor device with high breakdown voltage - Google Patents

Mos field effect semiconductor device with high breakdown voltage

Info

Publication number
JPS56133870A
JPS56133870A JP3770280A JP3770280A JPS56133870A JP S56133870 A JPS56133870 A JP S56133870A JP 3770280 A JP3770280 A JP 3770280A JP 3770280 A JP3770280 A JP 3770280A JP S56133870 A JPS56133870 A JP S56133870A
Authority
JP
Japan
Prior art keywords
resistance layer
pinch
semiconductor device
field effect
breakdown voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3770280A
Other languages
Japanese (ja)
Other versions
JPS622705B2 (en
Inventor
Tsutomu Ashida
Kiyotoshi Nakagawa
Katsumasa Fujii
Yasuo Torimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3770280A priority Critical patent/JPS56133870A/en
Publication of JPS56133870A publication Critical patent/JPS56133870A/en
Publication of JPS622705B2 publication Critical patent/JPS622705B2/ja
Priority to US07/277,440 priority patent/US4947232A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To decrease the characteristic change and improve the reliability of an MOS field effect semiconductor device with high breakdown voltage by a method wherein the pinch resistance layer which is readily affected by the external charge is completely covered with a conductor or semiconductor in order to fix at the electrically intermediate level. CONSTITUTION:In a semiconductor substrate 1 in which impurity has been diffused, on an insulating film 11 on a pinch resistance layer 5, a high-resistance layer 14 is provided so as to completely cover the pinch resistance layer 5, one end 12 of said high-resistance layer 14 being connected to a drain electrode 9, and the other 13 to a source electrode 8 in ohmic contact manner. When the operating voltages and input signals are supplied to the respective electrodes of the MOSFET having the pinch resistance layer 5 covered with the high-resistance layer 14, the voltage sloping of the high-resistance layer 14 connected between the source and drain electrodes 8 and 9 is approximately constant, so that the field of the pinch resistance layer 5 located directly below the high-resistance layer 14 can be maintained constant.
JP3770280A 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage Granted JPS56133870A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3770280A JPS56133870A (en) 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage
US07/277,440 US4947232A (en) 1980-03-22 1988-11-28 High voltage MOS transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3770280A JPS56133870A (en) 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage

Publications (2)

Publication Number Publication Date
JPS56133870A true JPS56133870A (en) 1981-10-20
JPS622705B2 JPS622705B2 (en) 1987-01-21

Family

ID=12504852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3770280A Granted JPS56133870A (en) 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage

Country Status (1)

Country Link
JP (1) JPS56133870A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154056A (en) * 1983-02-23 1984-09-03 Toshiba Corp Semiconductor device
EP0620599A1 (en) * 1993-03-31 1994-10-19 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
JPH0788141A (en) * 1993-06-30 1995-04-04 San Beam:Kk Rotary chair

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154056A (en) * 1983-02-23 1984-09-03 Toshiba Corp Semiconductor device
EP0620599A1 (en) * 1993-03-31 1994-10-19 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
JPH0788141A (en) * 1993-06-30 1995-04-04 San Beam:Kk Rotary chair

Also Published As

Publication number Publication date
JPS622705B2 (en) 1987-01-21

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