JPS56133870A - Mos field effect semiconductor device with high breakdown voltage - Google Patents
Mos field effect semiconductor device with high breakdown voltageInfo
- Publication number
- JPS56133870A JPS56133870A JP3770280A JP3770280A JPS56133870A JP S56133870 A JPS56133870 A JP S56133870A JP 3770280 A JP3770280 A JP 3770280A JP 3770280 A JP3770280 A JP 3770280A JP S56133870 A JPS56133870 A JP S56133870A
- Authority
- JP
- Japan
- Prior art keywords
- resistance layer
- pinch
- semiconductor device
- field effect
- breakdown voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000015556 catabolic process Effects 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To decrease the characteristic change and improve the reliability of an MOS field effect semiconductor device with high breakdown voltage by a method wherein the pinch resistance layer which is readily affected by the external charge is completely covered with a conductor or semiconductor in order to fix at the electrically intermediate level. CONSTITUTION:In a semiconductor substrate 1 in which impurity has been diffused, on an insulating film 11 on a pinch resistance layer 5, a high-resistance layer 14 is provided so as to completely cover the pinch resistance layer 5, one end 12 of said high-resistance layer 14 being connected to a drain electrode 9, and the other 13 to a source electrode 8 in ohmic contact manner. When the operating voltages and input signals are supplied to the respective electrodes of the MOSFET having the pinch resistance layer 5 covered with the high-resistance layer 14, the voltage sloping of the high-resistance layer 14 connected between the source and drain electrodes 8 and 9 is approximately constant, so that the field of the pinch resistance layer 5 located directly below the high-resistance layer 14 can be maintained constant.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3770280A JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
US07/277,440 US4947232A (en) | 1980-03-22 | 1988-11-28 | High voltage MOS transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3770280A JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56133870A true JPS56133870A (en) | 1981-10-20 |
JPS622705B2 JPS622705B2 (en) | 1987-01-21 |
Family
ID=12504852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3770280A Granted JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56133870A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59154056A (en) * | 1983-02-23 | 1984-09-03 | Toshiba Corp | Semiconductor device |
EP0620599A1 (en) * | 1993-03-31 | 1994-10-19 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
JPH0788141A (en) * | 1993-06-30 | 1995-04-04 | San Beam:Kk | Rotary chair |
-
1980
- 1980-03-22 JP JP3770280A patent/JPS56133870A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59154056A (en) * | 1983-02-23 | 1984-09-03 | Toshiba Corp | Semiconductor device |
EP0620599A1 (en) * | 1993-03-31 | 1994-10-19 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
JPH0788141A (en) * | 1993-06-30 | 1995-04-04 | San Beam:Kk | Rotary chair |
Also Published As
Publication number | Publication date |
---|---|
JPS622705B2 (en) | 1987-01-21 |
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