JPS54137286A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54137286A
JPS54137286A JP4568478A JP4568478A JPS54137286A JP S54137286 A JPS54137286 A JP S54137286A JP 4568478 A JP4568478 A JP 4568478A JP 4568478 A JP4568478 A JP 4568478A JP S54137286 A JPS54137286 A JP S54137286A
Authority
JP
Japan
Prior art keywords
electrode
featuring
gate
insulator film
gate insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4568478A
Other languages
Japanese (ja)
Other versions
JPS6237549B2 (en
Inventor
Yoshiharu Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4568478A priority Critical patent/JPS54137286A/en
Publication of JPS54137286A publication Critical patent/JPS54137286A/en
Publication of JPS6237549B2 publication Critical patent/JPS6237549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To prevent the gate breakdown of the FET of connecting the region featuring a high threshold voltage with the thick gate insulator film and the region featuring a large current capacity with the thin gate insulator film to the input terminal of the FET provided within the same channel. CONSTITUTION:The input signal is applied to diffusion layer 3 via bonding pad 1 and metal wiring 2. For the protective device to be provided at the gate of transistor 6 in the input circuit, part of diffusion layer 3 is used directly as the drain plus 1st and 2nd electrode 10 and 11 used as the gate electrodes, and furthermore added diffusion layer 8 is used as the source respectively. Thus, a MOS transistor is obtained. Gate insulator film 12 under electrode 10 is formed comparatively thin, and thus channel region 13 featuring a large current capacity is formed. While gate insulator film 14 under electrode 11 is formed thick, thus forming channel region 15 featuring a comparatively high threshold voltage. After this, electrode 10 is connected to electrode 11, and then the both electrodes are connected to the input terminal via wiring 2.
JP4568478A 1978-04-17 1978-04-17 Semiconductor device Granted JPS54137286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4568478A JPS54137286A (en) 1978-04-17 1978-04-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4568478A JPS54137286A (en) 1978-04-17 1978-04-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54137286A true JPS54137286A (en) 1979-10-24
JPS6237549B2 JPS6237549B2 (en) 1987-08-13

Family

ID=12726212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4568478A Granted JPS54137286A (en) 1978-04-17 1978-04-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54137286A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0087155A2 (en) * 1982-02-22 1983-08-31 Kabushiki Kaisha Toshiba Means for preventing the breakdown of an insulation layer in semiconductor devices
JPS6134967A (en) * 1984-05-03 1986-02-19 デイジタル　イクイプメント　コ−ポレ−シヨン Input protecting structure for vlsi integrated circuit device
JPS61283155A (en) * 1985-06-07 1986-12-13 Mitsubishi Electric Corp Input protecting circuit of semiconductor device
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
US5804878A (en) * 1992-12-09 1998-09-08 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5181579A (en) * 1975-01-16 1976-07-16 Hitachi Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5181579A (en) * 1975-01-16 1976-07-16 Hitachi Ltd

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0087155A2 (en) * 1982-02-22 1983-08-31 Kabushiki Kaisha Toshiba Means for preventing the breakdown of an insulation layer in semiconductor devices
US5113230A (en) * 1982-02-22 1992-05-12 Tokyo Shibaura Denki Kabushi Kaisha Semiconductor device having a conductive layer for preventing insulation layer destruction
JPS6134967A (en) * 1984-05-03 1986-02-19 デイジタル　イクイプメント　コ−ポレ−シヨン Input protecting structure for vlsi integrated circuit device
JPH0236071B2 (en) * 1984-05-03 1990-08-15 Digital Equipment Corp
US4952994A (en) * 1984-05-03 1990-08-28 Digital Equipment Corporation Input protection arrangement for VLSI integrated circuit devices
US5017985A (en) * 1984-05-03 1991-05-21 Digital Equipment Corporation Input protection arrangement for VLSI integrated circuit devices
JPS61283155A (en) * 1985-06-07 1986-12-13 Mitsubishi Electric Corp Input protecting circuit of semiconductor device
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
US5804878A (en) * 1992-12-09 1998-09-08 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US6031290A (en) * 1992-12-09 2000-02-29 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US6166414A (en) * 1992-12-09 2000-12-26 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US6448612B1 (en) 1992-12-09 2002-09-10 Semiconductor Energy Laboratory Co., Ltd. Pixel thin film transistor and a driver circuit for driving the pixel thin film transistor
US6608353B2 (en) 1992-12-09 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having pixel electrode connected to a laminate structure
US7045399B2 (en) 1992-12-09 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7061016B2 (en) 1992-12-09 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7105898B2 (en) 1992-12-09 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7547916B2 (en) 1992-12-09 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7897972B2 (en) 1992-12-09 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US8294152B2 (en) 1992-12-09 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit including pixel electrode comprising conductive film

Also Published As

Publication number Publication date
JPS6237549B2 (en) 1987-08-13

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