JPS5674960A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5674960A JPS5674960A JP15073279A JP15073279A JPS5674960A JP S5674960 A JPS5674960 A JP S5674960A JP 15073279 A JP15073279 A JP 15073279A JP 15073279 A JP15073279 A JP 15073279A JP S5674960 A JPS5674960 A JP S5674960A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- integrated circuit
- polysilicon
- inverter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain an inverter with a small area and satisfactory characteristics by vertically forming an N-channel transistor for driver and a load resistance on the surface of a substrate with regard to the VMOS integrated circuit. CONSTITUTION:An N-substrate is provided as a source and an area close to the side of a P-layer 2 is overlapped so taht ''punch-through'' phenomenon which is apt to occur in a short channel may be prevented. In addition, an N-layer 4 is overlapped to form a drain and a gate electrode 5 is provided on a slope of ''V'' groove through the intermediary of a thin gate insulative film. An electrode 5 is made of polysilicon or aluminium. A high resistance element 6 is created vertically on the surface of the substrate by vertically attaching polysilicon, etc. on the surface of the substrate. Then this element is connected to metal wiring 8 through a low-resistance area 7. In addition, each layer is covered with an insulative layer 9. If a positive potential is applied to the wiring 8 and the substrate 1 is grounded, an inverter which enables a gate 5 to output a drain 4 with an input is obtained. Besides, the length of a channel can be prolonged, thus enhancing a current drive capability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15073279A JPS5674960A (en) | 1979-11-22 | 1979-11-22 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15073279A JPS5674960A (en) | 1979-11-22 | 1979-11-22 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5674960A true JPS5674960A (en) | 1981-06-20 |
Family
ID=15503195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15073279A Pending JPS5674960A (en) | 1979-11-22 | 1979-11-22 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5674960A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4851889A (en) * | 1986-12-03 | 1989-07-25 | Fuji Electric Co., Ltd. | Insulated gate field effect transistor with vertical channel |
EP0375226A2 (en) * | 1988-12-21 | 1990-06-27 | Texas Instruments Incorporated | An seu hardened memory cell |
US5164325A (en) * | 1987-10-08 | 1992-11-17 | Siliconix Incorporated | Method of making a vertical current flow field effect transistor |
EP0853818A1 (en) * | 1995-08-21 | 1998-07-22 | SILICONIX Incorporated | Low voltage short channel trench dmos transistor |
US5877538A (en) * | 1995-06-02 | 1999-03-02 | Silixonix Incorporated | Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench |
US6096608A (en) * | 1997-06-30 | 2000-08-01 | Siliconix Incorporated | Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench |
JP2014033119A (en) * | 2012-08-06 | 2014-02-20 | Mitsubishi Electric Corp | Semiconductor device |
-
1979
- 1979-11-22 JP JP15073279A patent/JPS5674960A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4851889A (en) * | 1986-12-03 | 1989-07-25 | Fuji Electric Co., Ltd. | Insulated gate field effect transistor with vertical channel |
US5164325A (en) * | 1987-10-08 | 1992-11-17 | Siliconix Incorporated | Method of making a vertical current flow field effect transistor |
US5576245A (en) * | 1987-10-08 | 1996-11-19 | Siliconix Incorporated | Method of making vertical current flow field effect transistor |
EP0375226A2 (en) * | 1988-12-21 | 1990-06-27 | Texas Instruments Incorporated | An seu hardened memory cell |
US5877538A (en) * | 1995-06-02 | 1999-03-02 | Silixonix Incorporated | Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench |
EP0853818A1 (en) * | 1995-08-21 | 1998-07-22 | SILICONIX Incorporated | Low voltage short channel trench dmos transistor |
EP0853818A4 (en) * | 1995-08-21 | 1998-11-11 | Siliconix Inc | Low voltage short channel trench dmos transistor |
US6096608A (en) * | 1997-06-30 | 2000-08-01 | Siliconix Incorporated | Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench |
JP2014033119A (en) * | 2012-08-06 | 2014-02-20 | Mitsubishi Electric Corp | Semiconductor device |
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