JPS56110264A - High withstand voltage mos transistor - Google Patents

High withstand voltage mos transistor

Info

Publication number
JPS56110264A
JPS56110264A JP1147080A JP1147080A JPS56110264A JP S56110264 A JPS56110264 A JP S56110264A JP 1147080 A JP1147080 A JP 1147080A JP 1147080 A JP1147080 A JP 1147080A JP S56110264 A JPS56110264 A JP S56110264A
Authority
JP
Japan
Prior art keywords
type
region
insulating film
aluminum
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1147080A
Other languages
Japanese (ja)
Other versions
JPS6262069B2 (en
Inventor
Jun Ueda
Kuniki Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1147080A priority Critical patent/JPS56110264A/en
Publication of JPS56110264A publication Critical patent/JPS56110264A/en
Publication of JPS6262069B2 publication Critical patent/JPS6262069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region

Abstract

PURPOSE:To eliminate the occurrence of an electric field concentration in the high withstand voltage MOS transistor by forming a reverse conductivity type region directly under the boundary between a gate insulating film and a field insulating film, thereby eliminating a depletion layer in a semiconductor substrate. CONSTITUTION:A P type channel region 18 is diffused in an N type silicon substrate 17 which serves as a drain region. In addition, a P type diffusion region 19 is formed on the boundary between the gate insulating film 26 and the field insulating film 25. N<+> type source region 20 and N<+> type drain electrode pickup region 21 are formed by diffusion. Further, an aluminum gate electrode 23, an aluminum source electrode 22 and an aluminum drain electrode 24 are formed. The P type diffusion regions 18 and 19 are connected to an aluminum wiring so that they may have the same potential. Thus, it is possible to avoid the concentration of the electric field, even if a high voltage were applied to between the source electrode 22 and the drain electrode 24, and realize a high withstand voltage MOS transistor.
JP1147080A 1980-02-04 1980-02-04 High withstand voltage mos transistor Granted JPS56110264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1147080A JPS56110264A (en) 1980-02-04 1980-02-04 High withstand voltage mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1147080A JPS56110264A (en) 1980-02-04 1980-02-04 High withstand voltage mos transistor

Publications (2)

Publication Number Publication Date
JPS56110264A true JPS56110264A (en) 1981-09-01
JPS6262069B2 JPS6262069B2 (en) 1987-12-24

Family

ID=11778957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1147080A Granted JPS56110264A (en) 1980-02-04 1980-02-04 High withstand voltage mos transistor

Country Status (1)

Country Link
JP (1) JPS56110264A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0146181A2 (en) * 1983-12-16 1985-06-26 Koninklijke Philips Electronics N.V. Semiconductor device comprising a combined bipolar-field effect transistor
JPH03201452A (en) * 1989-12-28 1991-09-03 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH0766398A (en) * 1993-08-26 1995-03-10 Nec Corp High withstand voltage semiconductor device
WO1995011525A1 (en) * 1993-10-22 1995-04-27 Robert Bosch Gmbh SOLID-STATE p-CHANNEL HIGH-VOLTAGE COMPONENT
US5430316A (en) * 1992-02-18 1995-07-04 Sgs-Thomson Microeletronics, S.R.L. VDMOS transistor with improved breakdown characteristics
JPH08130307A (en) * 1994-10-31 1996-05-21 Nec Corp Semiconductor device and its manufacture
WO1999028974A1 (en) * 1997-12-02 1999-06-10 Siemens Aktiengesellschaft Pn-transition with increased breakdown voltage
EP1367648A3 (en) * 2002-05-24 2008-01-09 Texas Instruments Incorporated Semiconductor device with floating ring structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547881A (en) * 1977-06-21 1979-01-20 Victor Co Of Japan Ltd Mos field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547881A (en) * 1977-06-21 1979-01-20 Victor Co Of Japan Ltd Mos field effect transistor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0146181A2 (en) * 1983-12-16 1985-06-26 Koninklijke Philips Electronics N.V. Semiconductor device comprising a combined bipolar-field effect transistor
JPH03201452A (en) * 1989-12-28 1991-09-03 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US5430316A (en) * 1992-02-18 1995-07-04 Sgs-Thomson Microeletronics, S.R.L. VDMOS transistor with improved breakdown characteristics
US5589405A (en) * 1992-02-18 1996-12-31 Sgs-Thomson Microelectronics, S.R.L. Method for fabricating VDMOS transistor with improved breakdown characteristics
JPH0766398A (en) * 1993-08-26 1995-03-10 Nec Corp High withstand voltage semiconductor device
WO1995011525A1 (en) * 1993-10-22 1995-04-27 Robert Bosch Gmbh SOLID-STATE p-CHANNEL HIGH-VOLTAGE COMPONENT
JPH08130307A (en) * 1994-10-31 1996-05-21 Nec Corp Semiconductor device and its manufacture
WO1999028974A1 (en) * 1997-12-02 1999-06-10 Siemens Aktiengesellschaft Pn-transition with increased breakdown voltage
EP1367648A3 (en) * 2002-05-24 2008-01-09 Texas Instruments Incorporated Semiconductor device with floating ring structure

Also Published As

Publication number Publication date
JPS6262069B2 (en) 1987-12-24

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