JPS5552262A - Mos semiconductor device - Google Patents
Mos semiconductor deviceInfo
- Publication number
- JPS5552262A JPS5552262A JP12463078A JP12463078A JPS5552262A JP S5552262 A JPS5552262 A JP S5552262A JP 12463078 A JP12463078 A JP 12463078A JP 12463078 A JP12463078 A JP 12463078A JP S5552262 A JPS5552262 A JP S5552262A
- Authority
- JP
- Japan
- Prior art keywords
- oxidation film
- film
- gate electrode
- semiconductor device
- heat oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To provide high integration and high speed by surrounding a heat oxidation film, which covers a gate electrode, with an untietching film.
CONSTITUTION: A source region 31 and a drain region 32 are formed to a semiconductor substrate 11. A gate electrode 14 is formed between the two regions 31 and 32 through a gate oxidation film, then all of 14, 31 and 32 are covered with a heat oxidation film. An insulation layer 41 including an electrode window is formed in each place corresponding to the source region 31 and the drain region 32. Then an etching film 20 is formed in such a way that it surrounds at least the heat oxidation film that covers the gate electrode 14.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12463078A JPS5552262A (en) | 1978-10-12 | 1978-10-12 | Mos semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12463078A JPS5552262A (en) | 1978-10-12 | 1978-10-12 | Mos semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5552262A true JPS5552262A (en) | 1980-04-16 |
Family
ID=14890160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12463078A Pending JPS5552262A (en) | 1978-10-12 | 1978-10-12 | Mos semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5552262A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992389A (en) * | 1985-02-08 | 1991-02-12 | Kabushiki Kaisha Toshiba | Making a self aligned semiconductor device |
US5101262A (en) * | 1985-08-13 | 1992-03-31 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method of manufacturing it |
US5132758A (en) * | 1988-02-12 | 1992-07-21 | Hitachi, Ltd. | Semiconductor device and manufacturing method thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5366179A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Semiconductor device |
-
1978
- 1978-10-12 JP JP12463078A patent/JPS5552262A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5366179A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992389A (en) * | 1985-02-08 | 1991-02-12 | Kabushiki Kaisha Toshiba | Making a self aligned semiconductor device |
US5101262A (en) * | 1985-08-13 | 1992-03-31 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method of manufacturing it |
US5132758A (en) * | 1988-02-12 | 1992-07-21 | Hitachi, Ltd. | Semiconductor device and manufacturing method thereof |
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