JPS5552262A - Mos semiconductor device - Google Patents

Mos semiconductor device

Info

Publication number
JPS5552262A
JPS5552262A JP12463078A JP12463078A JPS5552262A JP S5552262 A JPS5552262 A JP S5552262A JP 12463078 A JP12463078 A JP 12463078A JP 12463078 A JP12463078 A JP 12463078A JP S5552262 A JPS5552262 A JP S5552262A
Authority
JP
Japan
Prior art keywords
oxidation film
film
gate electrode
semiconductor device
heat oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12463078A
Other languages
Japanese (ja)
Inventor
Katsuyuki Inayoshi
Shinpei Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12463078A priority Critical patent/JPS5552262A/en
Publication of JPS5552262A publication Critical patent/JPS5552262A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To provide high integration and high speed by surrounding a heat oxidation film, which covers a gate electrode, with an untietching film.
CONSTITUTION: A source region 31 and a drain region 32 are formed to a semiconductor substrate 11. A gate electrode 14 is formed between the two regions 31 and 32 through a gate oxidation film, then all of 14, 31 and 32 are covered with a heat oxidation film. An insulation layer 41 including an electrode window is formed in each place corresponding to the source region 31 and the drain region 32. Then an etching film 20 is formed in such a way that it surrounds at least the heat oxidation film that covers the gate electrode 14.
COPYRIGHT: (C)1980,JPO&Japio
JP12463078A 1978-10-12 1978-10-12 Mos semiconductor device Pending JPS5552262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12463078A JPS5552262A (en) 1978-10-12 1978-10-12 Mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12463078A JPS5552262A (en) 1978-10-12 1978-10-12 Mos semiconductor device

Publications (1)

Publication Number Publication Date
JPS5552262A true JPS5552262A (en) 1980-04-16

Family

ID=14890160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12463078A Pending JPS5552262A (en) 1978-10-12 1978-10-12 Mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS5552262A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992389A (en) * 1985-02-08 1991-02-12 Kabushiki Kaisha Toshiba Making a self aligned semiconductor device
US5101262A (en) * 1985-08-13 1992-03-31 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing it
US5132758A (en) * 1988-02-12 1992-07-21 Hitachi, Ltd. Semiconductor device and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5366179A (en) * 1976-11-26 1978-06-13 Toshiba Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5366179A (en) * 1976-11-26 1978-06-13 Toshiba Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992389A (en) * 1985-02-08 1991-02-12 Kabushiki Kaisha Toshiba Making a self aligned semiconductor device
US5101262A (en) * 1985-08-13 1992-03-31 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing it
US5132758A (en) * 1988-02-12 1992-07-21 Hitachi, Ltd. Semiconductor device and manufacturing method thereof

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