JPS57121271A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS57121271A
JPS57121271A JP56006590A JP659081A JPS57121271A JP S57121271 A JPS57121271 A JP S57121271A JP 56006590 A JP56006590 A JP 56006590A JP 659081 A JP659081 A JP 659081A JP S57121271 A JPS57121271 A JP S57121271A
Authority
JP
Japan
Prior art keywords
layer
function
type
gate electrode
switching element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56006590A
Other languages
Japanese (ja)
Other versions
JPS5847863B2 (en
Inventor
Shigeo Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56006590A priority Critical patent/JPS5847863B2/en
Publication of JPS57121271A publication Critical patent/JPS57121271A/en
Publication of JPS5847863B2 publication Critical patent/JPS5847863B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only

Abstract

PURPOSE:To integrate an FET having functions of both a memory element and switching element by providing the function of the memory element with an insulated gate electrode using a charge storage insulating film and providing the function of the switching element with a P-N junction gate electrode under a chennel. CONSTITUTION:A P type epitaxial layer 5 is, for example, formed via an N<+> type layer 15 on a P type Si substrate 1, and N<+> type source 7 and drain 8 are provided therein. The first gate electrode 11 is provided on the channel between the source 7 and the drain 8 through a charge storage insulating layer, e.g., a barium titanate layer 10. The layer 15 extending under the layer 5 is exposed partly at the part 13 on the surface through the layer 5 as the second gate. The function of the memory element is provided by the first insulating gate, and the function of the switching element is provided with the second junction gate. In this manner, the functions of both the elements can be integrated in small size.
JP56006590A 1981-01-20 1981-01-20 field effect transistor Expired JPS5847863B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56006590A JPS5847863B2 (en) 1981-01-20 1981-01-20 field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56006590A JPS5847863B2 (en) 1981-01-20 1981-01-20 field effect transistor

Publications (2)

Publication Number Publication Date
JPS57121271A true JPS57121271A (en) 1982-07-28
JPS5847863B2 JPS5847863B2 (en) 1983-10-25

Family

ID=11642540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56006590A Expired JPS5847863B2 (en) 1981-01-20 1981-01-20 field effect transistor

Country Status (1)

Country Link
JP (1) JPS5847863B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190933A (en) * 2004-12-29 2006-07-20 Hynix Semiconductor Inc Nonvolatile ferroelectric memory

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6352168A (en) * 1986-08-21 1988-03-05 Hitachi Koki Co Ltd Electrophotographic developing device
JP2022056788A (en) 2020-09-30 2022-04-11 スタンレー電気株式会社 Group iii nitride semiconductor nanoparticles and manufacturing method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190933A (en) * 2004-12-29 2006-07-20 Hynix Semiconductor Inc Nonvolatile ferroelectric memory

Also Published As

Publication number Publication date
JPS5847863B2 (en) 1983-10-25

Similar Documents

Publication Publication Date Title
JPS5457875A (en) Semiconductor nonvolatile memory device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5694670A (en) Complementary type mis semiconductor device
EP0460918A3 (en) Semiconductor device having improved insulated gate type transistor
JPS5632764A (en) Charge coupled device
JPS57121271A (en) Field effect transistor
JPS56110264A (en) High withstand voltage mos transistor
JPS54156483A (en) Non-volatile semiconductor memory device
JPS5727069A (en) Mos type simiconductor device
JPS56126977A (en) Junction type field effect transistor
JPS56125875A (en) Semiconductor integrated circuit device
JPS57192069A (en) Insulated gate field effect semiconductor device
JPS6489372A (en) Semiconductor device
JPS55102274A (en) Insulated gate field effect transistor
JPS5772388A (en) Junction type field-effect semiconductor device and its manufacdure
JPS564279A (en) Insulated gate type field effect transistor
JPS57162371A (en) Mos semiconductor memory device
JPS57132354A (en) Semiconductor memory storage
JPS55127052A (en) Field effect semiconductor device
JPS56147467A (en) Cmos semiconductor device and manufacture thereof
JPS5552254A (en) Semiconductor device
JPS5571059A (en) Mis memory element
JPS57103362A (en) Field effect transistor
JPS5649574A (en) Semiconductor device
JPS5580345A (en) Gate-insulated field-effect semiconductor device