JPS57103362A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS57103362A
JPS57103362A JP17933380A JP17933380A JPS57103362A JP S57103362 A JPS57103362 A JP S57103362A JP 17933380 A JP17933380 A JP 17933380A JP 17933380 A JP17933380 A JP 17933380A JP S57103362 A JPS57103362 A JP S57103362A
Authority
JP
Japan
Prior art keywords
region
substrate
electrode
gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17933380A
Other languages
Japanese (ja)
Inventor
Hideji Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17933380A priority Critical patent/JPS57103362A/en
Publication of JPS57103362A publication Critical patent/JPS57103362A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enable the operation of an FET by ohmically contacting a reverse conductive type high density region with the same conductive type high density source region in a low density substrate, and forming a gate electrode via an insulating film on the surface of the substrate including part of the source region. CONSTITUTION:An n<+> type region 2 is formed, for example, in a p<-> substrate 1, a source region 3 formed of shallow p<+> is formed to include part of the region in the region 2, and a source electrode 6 ohmically contacted with the regions 2, 3 is provided thereon. A gate electrode 5 is formed via a gate film 4 on the surface of the substrate including part of the region 3, and the back surface of the substrate 1 is grounded. The region 2 operates as a junction type gate, and the expansion of a depletion layer b is controlled by the positive voltage VS applied to the electrode 6. On the other hand, a depletion layer a is formed by the gate voltage VG in the substrate region under the electrode 5. Since the channel length L under the source region 3 can be varied in accordance with the values of the VG and VS, a nonsaturable FET can be provided.
JP17933380A 1980-12-18 1980-12-18 Field effect transistor Pending JPS57103362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17933380A JPS57103362A (en) 1980-12-18 1980-12-18 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17933380A JPS57103362A (en) 1980-12-18 1980-12-18 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS57103362A true JPS57103362A (en) 1982-06-26

Family

ID=16063998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17933380A Pending JPS57103362A (en) 1980-12-18 1980-12-18 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS57103362A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0659086U (en) * 1993-01-28 1994-08-16 定二 足立 Memo box

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0659086U (en) * 1993-01-28 1994-08-16 定二 足立 Memo box

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