JPS5332681A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5332681A
JPS5332681A JP10631076A JP10631076A JPS5332681A JP S5332681 A JPS5332681 A JP S5332681A JP 10631076 A JP10631076 A JP 10631076A JP 10631076 A JP10631076 A JP 10631076A JP S5332681 A JPS5332681 A JP S5332681A
Authority
JP
Japan
Prior art keywords
semiconductor device
source
respect
threshold voltage
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10631076A
Other languages
Japanese (ja)
Inventor
Isao Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10631076A priority Critical patent/JPS5332681A/en
Publication of JPS5332681A publication Critical patent/JPS5332681A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To control threshold voltage is desired by providing grooves having desired sloped surfaces with respect to substrate main surface between source and drain regions.
JP10631076A 1976-09-07 1976-09-07 Semiconductor device Pending JPS5332681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10631076A JPS5332681A (en) 1976-09-07 1976-09-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10631076A JPS5332681A (en) 1976-09-07 1976-09-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5332681A true JPS5332681A (en) 1978-03-28

Family

ID=14430406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10631076A Pending JPS5332681A (en) 1976-09-07 1976-09-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5332681A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574208A (en) * 1982-06-21 1986-03-04 Eaton Corporation Raised split gate EFET and circuitry
JPS6284300U (en) * 1985-11-13 1987-05-29
EP0449418A2 (en) * 1990-02-26 1991-10-02 Advanced Micro Devices, Inc. Insulated gate field effect device with a curved channel and method of fabrication
US5248893A (en) * 1990-02-26 1993-09-28 Advanced Micro Devices, Inc. Insulated gate field effect device with a smoothly curved depletion boundary in the vicinity of the channel-free zone

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574208A (en) * 1982-06-21 1986-03-04 Eaton Corporation Raised split gate EFET and circuitry
JPS6284300U (en) * 1985-11-13 1987-05-29
EP0449418A2 (en) * 1990-02-26 1991-10-02 Advanced Micro Devices, Inc. Insulated gate field effect device with a curved channel and method of fabrication
US5248893A (en) * 1990-02-26 1993-09-28 Advanced Micro Devices, Inc. Insulated gate field effect device with a smoothly curved depletion boundary in the vicinity of the channel-free zone

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