JPS57193065A - Insulated gate field effect transistor - Google Patents

Insulated gate field effect transistor

Info

Publication number
JPS57193065A
JPS57193065A JP7851181A JP7851181A JPS57193065A JP S57193065 A JPS57193065 A JP S57193065A JP 7851181 A JP7851181 A JP 7851181A JP 7851181 A JP7851181 A JP 7851181A JP S57193065 A JPS57193065 A JP S57193065A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
layer
insulated gate
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7851181A
Other languages
Japanese (ja)
Inventor
Tomizo Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP7851181A priority Critical patent/JPS57193065A/en
Publication of JPS57193065A publication Critical patent/JPS57193065A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To decrease a threshold voltage of an enhancement type IGFET without applying any operation to the parameter except the length of an inverted layer by forming a depletion layer between a drain part and a source part in a range that is not coupled directly between the drain part and the source part. CONSTITUTION:A drain part 2 and a source part 3 are diffused at the prescribed interval on the surface side of an Si substrate 1, a gate 4 formed of a gate oxidized film 6 and a gate electrode 7 disposed on the film 6 is formed on the surface of a substrate 1 between the part 2 and the part 3, thereby forming an enhancement type IGFET. In this structure, a depletion layer 5 is formed shallower than he parts 2, 3 in a range that is not coupled directly from the end of the part 2 to the end of the part 3. At this time, the layer 5 may be extended from either end toward the center, or may be provided at the intermediate between the ends. In this manner, a threshold voltage is lowered, thereby decreasing the power consumption.
JP7851181A 1981-05-22 1981-05-22 Insulated gate field effect transistor Pending JPS57193065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7851181A JPS57193065A (en) 1981-05-22 1981-05-22 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7851181A JPS57193065A (en) 1981-05-22 1981-05-22 Insulated gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS57193065A true JPS57193065A (en) 1982-11-27

Family

ID=13663957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7851181A Pending JPS57193065A (en) 1981-05-22 1981-05-22 Insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS57193065A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989012910A1 (en) * 1988-06-23 1989-12-28 Dallas Semiconductor Corporation Enclosed buried channel transistor
US4943537A (en) * 1988-06-23 1990-07-24 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989012910A1 (en) * 1988-06-23 1989-12-28 Dallas Semiconductor Corporation Enclosed buried channel transistor
US4906588A (en) * 1988-06-23 1990-03-06 Dallas Semiconductor Corporation Enclosed buried channel transistor
US4943537A (en) * 1988-06-23 1990-07-24 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough
US5688722A (en) * 1988-06-23 1997-11-18 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough

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