JPS6482672A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS6482672A
JPS6482672A JP62241411A JP24141187A JPS6482672A JP S6482672 A JPS6482672 A JP S6482672A JP 62241411 A JP62241411 A JP 62241411A JP 24141187 A JP24141187 A JP 24141187A JP S6482672 A JPS6482672 A JP S6482672A
Authority
JP
Japan
Prior art keywords
channel region
grooves
sidewall
channel
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62241411A
Other languages
Japanese (ja)
Other versions
JP2579954B2 (en
Inventor
Yoshio Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62241411A priority Critical patent/JP2579954B2/en
Publication of JPS6482672A publication Critical patent/JPS6482672A/en
Application granted granted Critical
Publication of JP2579954B2 publication Critical patent/JP2579954B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To increase a current driving force and to accelerate switching characteristic by forming a plurality of grooves in a channel region and increasing an effective channel width. CONSTITUTION:Source, drain regions 17, 18 are formed on an element forming region 13 surrounded by a field oxide film 12 on a substrate 11. A gate electrode 16 is formed through a gate oxide film 15 on a channel region between the regions 17 and 18. A plurality of grooves 14 are formed along a channel longitudinal direction on the channel region, and both ends of the grooves 14 are extended out of the channel region. Protrusions are formed between the grooves 14, the size of the protrusion is so miniaturized to the size or less of a depleted layer extended from the surface of the sidewall of the protrusion toward the interior of the substrate is brought into contact with a depleted layer extended from the surface of a sidewall opposite before an inversion layer is formed on the surface of the sidewall when a gate voltage is applied to form the inversion layer on the channel region.
JP62241411A 1987-09-25 1987-09-25 MOS transistor Expired - Lifetime JP2579954B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62241411A JP2579954B2 (en) 1987-09-25 1987-09-25 MOS transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62241411A JP2579954B2 (en) 1987-09-25 1987-09-25 MOS transistor

Publications (2)

Publication Number Publication Date
JPS6482672A true JPS6482672A (en) 1989-03-28
JP2579954B2 JP2579954B2 (en) 1997-02-12

Family

ID=17073889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62241411A Expired - Lifetime JP2579954B2 (en) 1987-09-25 1987-09-25 MOS transistor

Country Status (1)

Country Link
JP (1) JP2579954B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675164A (en) * 1995-06-07 1997-10-07 International Business Machines Corporation High performance multi-mesa field effect transistor
US6242783B1 (en) 1989-12-02 2001-06-05 Canon Kabushiki Kaisha Semiconductor device with insulated gate transistor
CN104752502A (en) * 2013-12-30 2015-07-01 中芯国际集成电路制造(上海)有限公司 Metal-oxide -semiconductor (MOS) transistor and forming method thereof
CN104952785A (en) * 2014-03-31 2015-09-30 中芯国际集成电路制造(上海)有限公司 Semiconductor device and manufacturing method thereof
EP3316285A1 (en) 2016-10-28 2018-05-02 Renesas Electronics Corporation Semiconductor device and method of manufacturing the semiconductor device
CN114127949A (en) * 2021-02-07 2022-03-01 深圳市汇顶科技股份有限公司 Field effect transistor and method for manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3964828B2 (en) 2003-05-26 2007-08-22 株式会社東芝 Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671974A (en) * 1979-11-16 1981-06-15 Fujitsu Ltd Insulating gate type electric field effect transistor
JPS5710973A (en) * 1980-06-24 1982-01-20 Agency Of Ind Science & Technol Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671974A (en) * 1979-11-16 1981-06-15 Fujitsu Ltd Insulating gate type electric field effect transistor
JPS5710973A (en) * 1980-06-24 1982-01-20 Agency Of Ind Science & Technol Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242783B1 (en) 1989-12-02 2001-06-05 Canon Kabushiki Kaisha Semiconductor device with insulated gate transistor
US6316813B1 (en) 1989-12-02 2001-11-13 Canon Kabushiki Kaisha Semiconductor device with insulated gate transistor
US5675164A (en) * 1995-06-07 1997-10-07 International Business Machines Corporation High performance multi-mesa field effect transistor
CN104752502A (en) * 2013-12-30 2015-07-01 中芯国际集成电路制造(上海)有限公司 Metal-oxide -semiconductor (MOS) transistor and forming method thereof
CN104952785A (en) * 2014-03-31 2015-09-30 中芯国际集成电路制造(上海)有限公司 Semiconductor device and manufacturing method thereof
EP3316285A1 (en) 2016-10-28 2018-05-02 Renesas Electronics Corporation Semiconductor device and method of manufacturing the semiconductor device
US10424665B2 (en) 2016-10-28 2019-09-24 Renesas Electronics Corporation Semiconductor device and method of manufacturing the semiconductor device
CN114127949A (en) * 2021-02-07 2022-03-01 深圳市汇顶科技股份有限公司 Field effect transistor and method for manufacturing the same
WO2022165817A1 (en) * 2021-02-07 2022-08-11 深圳市汇顶科技股份有限公司 Field-effect transistor and manufacturing method therefor

Also Published As

Publication number Publication date
JP2579954B2 (en) 1997-02-12

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