JPS647661A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS647661A JPS647661A JP16125987A JP16125987A JPS647661A JP S647661 A JPS647661 A JP S647661A JP 16125987 A JP16125987 A JP 16125987A JP 16125987 A JP16125987 A JP 16125987A JP S647661 A JPS647661 A JP S647661A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- layer polysilicon
- layer
- polysilicon
- anisotropic etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a semiconductor device with a MOS type transistor, characteristics of which are not deteriorated by applying high voltage and working speed of which can be increased, by disposing upper-layer polysilicon formed through anisotropic etching on a side face on at least the drain side of a gate electrode and holding the potential of the upper-layer polysilicon at the same value as the gate electrode. CONSTITUTION:In a MOS type transistor composed of a gate electrode 3 organized of polysilicon and source-drain regions constructed in LDD structure by each impurity layer 5, 7 in low concentration and high concentration, upper- layer polysilicon 6 shaped through anisotropic etching is arranged on a side face on at least the drain side of the gate electrode 3, and the potential of the upper-layer polysilicon 6 is held at the same value as the gate electrode 3. The gate electrode 3 is formed, an oxide film 4 is shaped onto the surface of the gate electrode 3, and the low-concentration impurity layer 5 is formed. Upper-layer polysilicon 6 is shaped, the upper-layer polysilicon 6 is left only on the sidewall of the gate electrode 3 through anisotropic etching, and the high-concentration impurity 7 is formed. The gate electrode 3 and the upper- layer polysilicon 6 are connected electrically by an Al electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16125987A JPS647661A (en) | 1987-06-30 | 1987-06-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16125987A JPS647661A (en) | 1987-06-30 | 1987-06-30 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS647661A true JPS647661A (en) | 1989-01-11 |
Family
ID=15731695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16125987A Pending JPS647661A (en) | 1987-06-30 | 1987-06-30 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS647661A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0348428A (en) * | 1989-04-21 | 1991-03-01 | Matsushita Electron Corp | Semiconductor device |
JPH04115538A (en) * | 1990-09-05 | 1992-04-16 | Mitsubishi Electric Corp | Semiconductor device |
-
1987
- 1987-06-30 JP JP16125987A patent/JPS647661A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0348428A (en) * | 1989-04-21 | 1991-03-01 | Matsushita Electron Corp | Semiconductor device |
JPH04115538A (en) * | 1990-09-05 | 1992-04-16 | Mitsubishi Electric Corp | Semiconductor device |
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