JPS5685851A - Complementary mos type semiconductor device - Google Patents

Complementary mos type semiconductor device

Info

Publication number
JPS5685851A
JPS5685851A JP16284079A JP16284079A JPS5685851A JP S5685851 A JPS5685851 A JP S5685851A JP 16284079 A JP16284079 A JP 16284079A JP 16284079 A JP16284079 A JP 16284079A JP S5685851 A JPS5685851 A JP S5685851A
Authority
JP
Japan
Prior art keywords
region
type
forming
mosfet
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16284079A
Other languages
Japanese (ja)
Inventor
Hiroshi Inoue
Tsuneo Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP16284079A priority Critical patent/JPS5685851A/en
Publication of JPS5685851A publication Critical patent/JPS5685851A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

PURPOSE:To avoid the decrease of a negative resistance breakdown voltage due to a parasitic transistor without increasing the pattern area by forming a channel stopper region forming a C-MOSFET in contact with a source region when forming the C- MOSFET. CONSTITUTION:The configuration of the FET forming the C-MOSFET is formed as follows: A p type well region 40 is diffused in an n type Si substrate 39, an n<+> type source region 42 and an n<+> type drain region 41 are formed therein, and are surrounded by a P<+> type channel stopper region 43 formed between the end of the region 40 and the substrate 39. In this configuration, the stopper region 43 of the source region 42 side is formed in contact with the region 42, and the regions 42 and 43 are commonly connected using a Vss wire 46. Thus, the effect of the parasitic transistor 51 within the region 40 caused by the region 42 and the substrate 39 is reduced, thereby preventing the decrease of the negative resistance breakdown voltage and enabling the operation with high power source voltage.
JP16284079A 1979-12-17 1979-12-17 Complementary mos type semiconductor device Pending JPS5685851A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16284079A JPS5685851A (en) 1979-12-17 1979-12-17 Complementary mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16284079A JPS5685851A (en) 1979-12-17 1979-12-17 Complementary mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5685851A true JPS5685851A (en) 1981-07-13

Family

ID=15762236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16284079A Pending JPS5685851A (en) 1979-12-17 1979-12-17 Complementary mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5685851A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076160A (en) * 1983-10-03 1985-04-30 Seiko Epson Corp Mos type semiconductor integrated circuit
US4622573A (en) * 1983-03-31 1986-11-11 International Business Machines Corporation CMOS contacting structure having degeneratively doped regions for the prevention of latch-up
JPS61263260A (en) * 1985-05-17 1986-11-21 Nec Corp Semiconductor device
JP4942272B2 (en) * 1999-12-16 2012-05-30 旭硝子株式会社 Heater support structure and heating furnace for glass plate bending

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622573A (en) * 1983-03-31 1986-11-11 International Business Machines Corporation CMOS contacting structure having degeneratively doped regions for the prevention of latch-up
JPS6076160A (en) * 1983-10-03 1985-04-30 Seiko Epson Corp Mos type semiconductor integrated circuit
JPS61263260A (en) * 1985-05-17 1986-11-21 Nec Corp Semiconductor device
JP4942272B2 (en) * 1999-12-16 2012-05-30 旭硝子株式会社 Heater support structure and heating furnace for glass plate bending

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