JPS55127052A - Field effect semiconductor device - Google Patents

Field effect semiconductor device

Info

Publication number
JPS55127052A
JPS55127052A JP1829480A JP1829480A JPS55127052A JP S55127052 A JPS55127052 A JP S55127052A JP 1829480 A JP1829480 A JP 1829480A JP 1829480 A JP1829480 A JP 1829480A JP S55127052 A JPS55127052 A JP S55127052A
Authority
JP
Japan
Prior art keywords
layer
substrate
drain
reference potential
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1829480A
Other languages
Japanese (ja)
Other versions
JPS5837989B2 (en
Inventor
Kazushige Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55018294A priority Critical patent/JPS5837989B2/en
Publication of JPS55127052A publication Critical patent/JPS55127052A/en
Publication of JPS5837989B2 publication Critical patent/JPS5837989B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To minimize a channel leakage current from the circumference of an element to the back of a substrate by arranging an impurity diffused layer same in conductivity as source and drain around the element and fixing it at reference potential 0V.
CONSTITUTION: In a process to form n-type source and drain 2, a gate 3 and a metallic wiring 4 on a p-type Si substrate 1, an n+-layer 2' is formed around a circuit element 6 simultaneously with formation of source and drain, and the layer 2' is set at reference potential 0V. A potential of the substrate 1 is set at a specified value to obtain an enhancement type. In this case, a threshold voltage same as the circuit element is obtainable for a parasitic MIS FET consisting of an outermost layer 2 of the element and a channel stopper layer 2', and a leakage current from the circuit element to its circumference is prevented. The layer 2' can be used as a part of the winding of reference potential. A high performance of MIS device is thus obtainable.
COPYRIGHT: (C)1980,JPO&Japio
JP55018294A 1980-02-16 1980-02-16 field effect semiconductor device Expired JPS5837989B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55018294A JPS5837989B2 (en) 1980-02-16 1980-02-16 field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55018294A JPS5837989B2 (en) 1980-02-16 1980-02-16 field effect semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13909774A Division JPS5164881A (en) 1974-12-03 1974-12-03 DENKAIKOKAHANDOTAISOCHI

Publications (2)

Publication Number Publication Date
JPS55127052A true JPS55127052A (en) 1980-10-01
JPS5837989B2 JPS5837989B2 (en) 1983-08-19

Family

ID=11967581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55018294A Expired JPS5837989B2 (en) 1980-02-16 1980-02-16 field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5837989B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107865A (en) * 1983-11-17 1985-06-13 Toshiba Corp Mos type semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6023290U (en) * 1983-07-26 1985-02-18 株式会社荏原製作所 drain pump

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492437A (en) * 1972-04-18 1974-01-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492437A (en) * 1972-04-18 1974-01-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107865A (en) * 1983-11-17 1985-06-13 Toshiba Corp Mos type semiconductor device

Also Published As

Publication number Publication date
JPS5837989B2 (en) 1983-08-19

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