JPS55127052A - Field effect semiconductor device - Google Patents
Field effect semiconductor deviceInfo
- Publication number
- JPS55127052A JPS55127052A JP1829480A JP1829480A JPS55127052A JP S55127052 A JPS55127052 A JP S55127052A JP 1829480 A JP1829480 A JP 1829480A JP 1829480 A JP1829480 A JP 1829480A JP S55127052 A JPS55127052 A JP S55127052A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- drain
- reference potential
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To minimize a channel leakage current from the circumference of an element to the back of a substrate by arranging an impurity diffused layer same in conductivity as source and drain around the element and fixing it at reference potential 0V.
CONSTITUTION: In a process to form n-type source and drain 2, a gate 3 and a metallic wiring 4 on a p-type Si substrate 1, an n+-layer 2' is formed around a circuit element 6 simultaneously with formation of source and drain, and the layer 2' is set at reference potential 0V. A potential of the substrate 1 is set at a specified value to obtain an enhancement type. In this case, a threshold voltage same as the circuit element is obtainable for a parasitic MIS FET consisting of an outermost layer 2 of the element and a channel stopper layer 2', and a leakage current from the circuit element to its circumference is prevented. The layer 2' can be used as a part of the winding of reference potential. A high performance of MIS device is thus obtainable.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55018294A JPS5837989B2 (en) | 1980-02-16 | 1980-02-16 | field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55018294A JPS5837989B2 (en) | 1980-02-16 | 1980-02-16 | field effect semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13909774A Division JPS5164881A (en) | 1974-12-03 | 1974-12-03 | DENKAIKOKAHANDOTAISOCHI |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55127052A true JPS55127052A (en) | 1980-10-01 |
JPS5837989B2 JPS5837989B2 (en) | 1983-08-19 |
Family
ID=11967581
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55018294A Expired JPS5837989B2 (en) | 1980-02-16 | 1980-02-16 | field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5837989B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60107865A (en) * | 1983-11-17 | 1985-06-13 | Toshiba Corp | Mos type semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6023290U (en) * | 1983-07-26 | 1985-02-18 | 株式会社荏原製作所 | drain pump |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS492437A (en) * | 1972-04-18 | 1974-01-10 |
-
1980
- 1980-02-16 JP JP55018294A patent/JPS5837989B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS492437A (en) * | 1972-04-18 | 1974-01-10 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60107865A (en) * | 1983-11-17 | 1985-06-13 | Toshiba Corp | Mos type semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5837989B2 (en) | 1983-08-19 |
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