JPS5780777A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5780777A JPS5780777A JP15686880A JP15686880A JPS5780777A JP S5780777 A JPS5780777 A JP S5780777A JP 15686880 A JP15686880 A JP 15686880A JP 15686880 A JP15686880 A JP 15686880A JP S5780777 A JPS5780777 A JP S5780777A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- drain
- terminal
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To prevent the decrease in the withstand voltage between a source and a drain of a semiconductor device by forming the same conductive type charge absorbing diffused layer as a drain region of an MOS transistor at the periphery of the drain region. CONSTITUTION:The same conductive type charge absorbing diffused layer 10 as an N<+> type diffused layer 5 is formed at the periphery of the layer 5 of a drain region. A charge absorbing terminal 11 formed at the layer 10 is set at the same potential as the substrate terminal 4. Since the layer 10 is set at the same potential (negative) as the terminal 4, most of the charge flowing out to a P type Si substrate 7 form a pinch-off region between the channel region 8 and the drain region 5 is absorbed to the terminal 11. Since the layer 10 is set in reverse direction to the source region 6 for the pinch-off region, flowing charge from the pinch-off region will not flow to the region 6 side. Accordingly, the raising of the substrate potential in the vicinity of the region 6 is eliminated, thereby preventing the decrease in the withstand voltage between the source and the drain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15686880A JPS5780777A (en) | 1980-11-06 | 1980-11-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15686880A JPS5780777A (en) | 1980-11-06 | 1980-11-06 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5780777A true JPS5780777A (en) | 1982-05-20 |
Family
ID=15637138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15686880A Pending JPS5780777A (en) | 1980-11-06 | 1980-11-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5780777A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0040066A1 (en) * | 1980-05-10 | 1981-11-18 | Sony Corporation | Tracking control arrangements for magnetic reproducing devices |
-
1980
- 1980-11-06 JP JP15686880A patent/JPS5780777A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0040066A1 (en) * | 1980-05-10 | 1981-11-18 | Sony Corporation | Tracking control arrangements for magnetic reproducing devices |
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