JPS57100767A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS57100767A
JPS57100767A JP55177492A JP17749280A JPS57100767A JP S57100767 A JPS57100767 A JP S57100767A JP 55177492 A JP55177492 A JP 55177492A JP 17749280 A JP17749280 A JP 17749280A JP S57100767 A JPS57100767 A JP S57100767A
Authority
JP
Japan
Prior art keywords
type
region
semiconductor device
substrate
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55177492A
Other languages
Japanese (ja)
Inventor
Hideji Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55177492A priority Critical patent/JPS57100767A/en
Publication of JPS57100767A publication Critical patent/JPS57100767A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a MOS type semiconductor device eliminating latch up and other malfunction by a method wherein a circuit trapping unnecessary carriers created in a substrate by the overshoot or undershoot of input/output pins is provided. CONSTITUTION:A p<-> type well region 22 is formed on an n<-> type silicon substrate 21, and an n<-> type source region 23 and an n<-> type drain region 24 are formed. Furthermore, a gate electrode 26 is formed on a channel region through a gate oxide film 25 to form an n channel transistor. Meanwhile, a p<+> type source region 23' and a p<+> type drain region 24' are formed on the n<-> type substrate and a gate electrode 26' is provided through an insulating film 25' to form a p channel transistor. A p<-> type carrier trap region 28 is formed between the p<+> type drain region 24' and the p<-> type well region and the region 28 is connected to ground.
JP55177492A 1980-12-16 1980-12-16 Mos type semiconductor device Pending JPS57100767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55177492A JPS57100767A (en) 1980-12-16 1980-12-16 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55177492A JPS57100767A (en) 1980-12-16 1980-12-16 Mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS57100767A true JPS57100767A (en) 1982-06-23

Family

ID=16031841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55177492A Pending JPS57100767A (en) 1980-12-16 1980-12-16 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS57100767A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984001241A1 (en) * 1982-09-20 1984-03-29 Semi Processes Inc Cmos integrated circuit with guard bands for latch-up protection
JPS6083362A (en) * 1983-10-14 1985-05-11 Hitachi Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984001241A1 (en) * 1982-09-20 1984-03-29 Semi Processes Inc Cmos integrated circuit with guard bands for latch-up protection
JPS6083362A (en) * 1983-10-14 1985-05-11 Hitachi Ltd Semiconductor device

Similar Documents

Publication Publication Date Title
JPS5493981A (en) Semiconductor device
JPS56169359A (en) Semiconductor integrated circuit device
JPS57100767A (en) Mos type semiconductor device
JPS5759384A (en) Manufacture of longitudinal type insulated field effect semiconductor device
JPS57107067A (en) Manufacture of semiconductor device
JPS5771179A (en) Input protective circuit device
JPS5448179A (en) Mis-type semiconductor integrated circuit device
JPS53112687A (en) Semiconductor device
JPS56165358A (en) Semiconductor device
JPS57166071A (en) Semiconductor device
JPS55113378A (en) Semiconductor device and its manufacturing method
JPS57106082A (en) Manufacture of schottky junction type electric field effect transistor
JPS5780777A (en) Semiconductor device
JPS57148375A (en) Semiconductor device
JPS5736863A (en) Manufacture of semiconductor device
JPS56148861A (en) Field effect semiconductor device
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5754372A (en) Semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5455180A (en) Semiconductor circuit device
JPS56150867A (en) Semiconductor device
JPS55127052A (en) Field effect semiconductor device
JPS57201080A (en) Semiconductor device
JPS5457881A (en) Semiconductor device
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device