JPS5457881A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5457881A JPS5457881A JP12427277A JP12427277A JPS5457881A JP S5457881 A JPS5457881 A JP S5457881A JP 12427277 A JP12427277 A JP 12427277A JP 12427277 A JP12427277 A JP 12427277A JP S5457881 A JPS5457881 A JP S5457881A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- polysi
- channel
- wiring
- metal wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To increase the integration density of a metal GateMOS integrated circuit with the number of contact holes reduced, by using a PolySi wiring for the connection between a metal wiring and diffusion layer, etc.
CONSTITUTION: Inside N-type silicon substrate 1, P- diffusion layer 2 and either P+ diffusion layer 3 for a P-channel source and drain or a N+ diffusion layer for a N-channel source and drain are formed, and field oxidized film 5 and Gate oxidized film 6 are formed on it. Further, Mo metal wiring 7 and a PolySi layer are stacked in sequence, and P-channel and N-channel diffusion treatments are made respectively. Then, PolySi wiring 8 is formed. In this way, the diffusion layer and metal wiring are connected together by PolySi so as to reduce the number of contact holes, thereby reducing the area of wirings
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12427277A JPS5457881A (en) | 1977-10-17 | 1977-10-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12427277A JPS5457881A (en) | 1977-10-17 | 1977-10-17 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5457881A true JPS5457881A (en) | 1979-05-10 |
Family
ID=14881222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12427277A Pending JPS5457881A (en) | 1977-10-17 | 1977-10-17 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5457881A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63204628A (en) * | 1987-02-19 | 1988-08-24 | Nec Corp | Semiconductor integrated circuit device |
US5326713A (en) * | 1992-09-04 | 1994-07-05 | Taiwan Semiconductor Manufacturies Company | Buried contact process |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5297688A (en) * | 1976-02-10 | 1977-08-16 | Nec Corp | Semiconductor device |
-
1977
- 1977-10-17 JP JP12427277A patent/JPS5457881A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5297688A (en) * | 1976-02-10 | 1977-08-16 | Nec Corp | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63204628A (en) * | 1987-02-19 | 1988-08-24 | Nec Corp | Semiconductor integrated circuit device |
US5326713A (en) * | 1992-09-04 | 1994-07-05 | Taiwan Semiconductor Manufacturies Company | Buried contact process |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5457881A (en) | Semiconductor device | |
JPS5375877A (en) | Vertical type micro mos transistor | |
JPS5522879A (en) | Insulation gate type field effect semiconductor device | |
JPS648657A (en) | Supplementary semiconductor integrated circuit device | |
JPS5768075A (en) | Manufacture of integrated circuit device | |
JPS5214381A (en) | Mis-type semiconductor device | |
JPS5567166A (en) | Preparation of mos type semiconductor device | |
JPS5413279A (en) | Manufacture for semiconductor integrated circuit device | |
JPS5552262A (en) | Mos semiconductor device | |
JPS5457873A (en) | Semiconductor device | |
JPS5565470A (en) | Mos integrated circuit | |
JPS522180A (en) | Method of fabricating mos semiconductor integrated circuit | |
JPS5427382A (en) | Semiconductor integrated circuit device | |
JPS5513944A (en) | C-mos semiconductor device | |
JPS5368181A (en) | Semiconductor integrated circuit | |
JPS54104782A (en) | Mos type semiconductor device | |
JPS5457880A (en) | Semiconductor device | |
JPS5455180A (en) | Semiconductor circuit device | |
JPS5371586A (en) | Semiconductor integrated circuit device | |
JPS5346287A (en) | Production of semiconductor integrated circuit | |
JPS5339087A (en) | Integrated circuit | |
JPS5448182A (en) | Semiconductor integrated circuit device | |
JPS5582449A (en) | Cell of master slice semiconductor integrated circuit | |
JPS52113184A (en) | Semiconductor integrated circuit | |
JPS56133869A (en) | Mos type semiconductor device and manufacture thereof |