JPS5455180A - Semiconductor circuit device - Google Patents

Semiconductor circuit device

Info

Publication number
JPS5455180A
JPS5455180A JP12212577A JP12212577A JPS5455180A JP S5455180 A JPS5455180 A JP S5455180A JP 12212577 A JP12212577 A JP 12212577A JP 12212577 A JP12212577 A JP 12212577A JP S5455180 A JPS5455180 A JP S5455180A
Authority
JP
Japan
Prior art keywords
region
film
layer
gate
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12212577A
Other languages
Japanese (ja)
Inventor
Kazuyuki Saito
Michiyuki Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12212577A priority Critical patent/JPS5455180A/en
Publication of JPS5455180A publication Critical patent/JPS5455180A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the scale of integration by beforehand connecting the gate of one transistor to the region serving also as the drains and sources of two transistors at the time of integrating the two MOS transistors on the same semiconductor substrate. CONSTITUTION:N type regions 2, 3, 4 are diffusion-formed in the region enclosed by the insulation layer on a P type semiconductor substrate 1, and the surface is covered with an insulation film 9. Next, a conductive layer 7 is provided on the film 9 over the region 5 between the regions 2 and 3 and a conductive layer 8 is also formed on the film 9 over the region 6 between the regions 3 and 4. At this time, the conductive layer 8 is extended onto the region 3 and this is kept connected to the region 3 through the opening opened in the film 9. This constitution forms the MOS transistor T1 in which the region 2 is its source, the region 3 its drain, the layer 7 its gate and the region 5 its channel. Further, the MOS transistor T2 in which the region 3 is its source, the region 4 its drain, the layer 8 its gate and the region 6 its channel, is formed.
JP12212577A 1977-10-11 1977-10-11 Semiconductor circuit device Pending JPS5455180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12212577A JPS5455180A (en) 1977-10-11 1977-10-11 Semiconductor circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12212577A JPS5455180A (en) 1977-10-11 1977-10-11 Semiconductor circuit device

Publications (1)

Publication Number Publication Date
JPS5455180A true JPS5455180A (en) 1979-05-02

Family

ID=14828229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12212577A Pending JPS5455180A (en) 1977-10-11 1977-10-11 Semiconductor circuit device

Country Status (1)

Country Link
JP (1) JPS5455180A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538092A (en) * 1978-09-05 1980-03-17 Rockwell International Corp Pulllup electric field effect transistor element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49112574A (en) * 1973-02-24 1974-10-26
JPS5087591A (en) * 1973-12-03 1975-07-14

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49112574A (en) * 1973-02-24 1974-10-26
JPS5087591A (en) * 1973-12-03 1975-07-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538092A (en) * 1978-09-05 1980-03-17 Rockwell International Corp Pulllup electric field effect transistor element

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