JPS54127289A - Semiconductor integrated circuit device and its manufacture - Google Patents

Semiconductor integrated circuit device and its manufacture

Info

Publication number
JPS54127289A
JPS54127289A JP3511778A JP3511778A JPS54127289A JP S54127289 A JPS54127289 A JP S54127289A JP 3511778 A JP3511778 A JP 3511778A JP 3511778 A JP3511778 A JP 3511778A JP S54127289 A JPS54127289 A JP S54127289A
Authority
JP
Japan
Prior art keywords
film
load transistor
gate oxide
oxide film
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3511778A
Other languages
Japanese (ja)
Other versions
JPS6237546B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3511778A priority Critical patent/JPS54127289A/en
Publication of JPS54127289A publication Critical patent/JPS54127289A/en
Publication of JPS6237546B2 publication Critical patent/JPS6237546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the area of a load transistor and to improve a degree of integration by fixing gate oxide film thicknesses (toxd) and (toxl) of a driver transistor and the load transistor with (toxd) less than (toxl). CONSTITUTION:On substrate 1, silicon dioxide film 2 and silicon nitride film 3 are both formed. Next, boron ions are injected to form channel stop region 4. Then, silicon dioxide film 5 for a field is formed selevtively. Next, the patterning of only film 3 is done and the part for the load transistor region is removed. Film 2 is removed and then, gate oxide film 7GL is formed. Then, films 3 and 2 in the driver transistor region are both removed. Next, gate oxide film 7GD at the driver transistor side is formed. Their film thickness are fixed with 7GD less than 7GL, so that a current ratio between both transistors can be made high enough without increasing the area of the load transistor.
JP3511778A 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture Granted JPS54127289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3511778A JPS54127289A (en) 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3511778A JPS54127289A (en) 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture

Publications (2)

Publication Number Publication Date
JPS54127289A true JPS54127289A (en) 1979-10-03
JPS6237546B2 JPS6237546B2 (en) 1987-08-13

Family

ID=12432977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3511778A Granted JPS54127289A (en) 1978-03-27 1978-03-27 Semiconductor integrated circuit device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54127289A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100478A (en) * 1980-01-16 1981-08-12 Toshiba Corp Semiconductor device and manufacture thereof
JPS6237943U (en) * 1986-05-01 1987-03-06
JPH03116968A (en) * 1989-09-29 1991-05-17 Sharp Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542682A (en) * 1977-06-08 1979-01-10 Mitsubishi Electric Corp Manufacture of mos-type integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542682A (en) * 1977-06-08 1979-01-10 Mitsubishi Electric Corp Manufacture of mos-type integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100478A (en) * 1980-01-16 1981-08-12 Toshiba Corp Semiconductor device and manufacture thereof
JPS6237943U (en) * 1986-05-01 1987-03-06
JPH03116968A (en) * 1989-09-29 1991-05-17 Sharp Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6237546B2 (en) 1987-08-13

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