JPS54144182A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54144182A JPS54144182A JP5303878A JP5303878A JPS54144182A JP S54144182 A JPS54144182 A JP S54144182A JP 5303878 A JP5303878 A JP 5303878A JP 5303878 A JP5303878 A JP 5303878A JP S54144182 A JPS54144182 A JP S54144182A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- sio2
- diffusion
- electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 238000009792 diffusion process Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 230000002457 bidirectional effect Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 231100000989 no adverse effect Toxicity 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To establish the double diffusion type MOSFET with high output bidirectional protective diode, with low cost and high dielectric strength, by using the substrate material as it is. CONSTITUTION:The SiO2 mask is provided on the N type substrate material 31 4 to 7 mum thick, and the P type diffusion layers 32 and 33 are made, 5 mu in depth. In this case, the SiO2 film caused in the layers 32,33 is selectively opened 56 to 58. The hole 56 is formed with the difference of film thickness. Further, the N layers 41,34,37,38 about 1 mu in depth are selectively diffused to form the channel 35 about 1 mu long. On the channel, the gate oxide film 36, Mo electrode 39 are provided, hole is opened after coating with SiO2 and the Al electrodes 40 and 42 are attached. The electrode 39 is connected to the electrode via the layers 37-33-38, and bidirectional protective diode is inserted between the gate and source. Thus, since the diode 2 can be formed with the diffusion at double diffusion MOSFET formation, even if the inpurity concentration of the substrate is greatly decreased, no adverse effect on other elements is made and high dielectric strength and output can be obtained without using expensive epitaxial substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5303878A JPS54144182A (en) | 1978-05-02 | 1978-05-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5303878A JPS54144182A (en) | 1978-05-02 | 1978-05-02 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54144182A true JPS54144182A (en) | 1979-11-10 |
Family
ID=12931709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5303878A Pending JPS54144182A (en) | 1978-05-02 | 1978-05-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54144182A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210677A (en) * | 1982-06-01 | 1983-12-07 | Nec Corp | Field effect transistor |
| US4630084A (en) * | 1981-02-02 | 1986-12-16 | Siemens Aktiengesellschaft | Vertical mis-field effect transistor with low forward resistance |
-
1978
- 1978-05-02 JP JP5303878A patent/JPS54144182A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4630084A (en) * | 1981-02-02 | 1986-12-16 | Siemens Aktiengesellschaft | Vertical mis-field effect transistor with low forward resistance |
| JPS58210677A (en) * | 1982-06-01 | 1983-12-07 | Nec Corp | Field effect transistor |
| JPH0559589B2 (en) * | 1982-06-01 | 1993-08-31 | Nippon Electric Co |
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